Results 111 to 120 of about 70,763 (310)
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Changing the size and shape of Ge island by chemical etching
, 2001 Self-assembled Ge islands were grown on Si (1 0 0) substrate by Si2H6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition,
Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China. +9 more
core
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Low power 2 x 2 thermo-optic SOI waveguide switch fabricated by anisotropy chemical etching
, 2004 A 2 x 2 thermo-optic (TO) Mach-Zehnder (MZ) switch based on silicon waveguides with large cross section was designed and fabricated on silicon-on-insulator (SOI) wafer.
Xia, JS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Hai Dian,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: jsxia@red.semi.ac.cn +5 more
core
Nano- and microscratching as a potential method for texturing the Si surface
Moldavian Journal of the Physical Sciences, 2014 The possibility of Si texturing through the use of nano- and microscratching with subsequent chemical etching has been investigated. The influence of the scratching speed, orientation of the indenter (face-on, edge-on) and normal load on the mechanism of
Prisăcaru, Andrian +5 more
doaj
Zirconium Surface Treatment via Chemical Etching. [PDF]
Materials (Basel), 2023 Gołasz P +3 more
europepmc +1 more source
Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Intermediate Structures of Pt–Ni Nanoparticles during Selective Chemical and Electrochemical Etching
, 2019 Both chemical and electrochemical etching are effective methods for tailoring the surface composition of Pt-based catalytic bimetallic nanoparticles (NPs).
Zhaslan Baraissov +11 more
core +1 more source
The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials
NanomaterialsThe influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz +5 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source