Results 1 to 10 of about 86,621 (303)

Numerical and experimental studies of the carbon etching in EUV-induced plasma [PDF]

, 2016
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion ...
Astakhov, D. I., Bijkerk, F., Goedheer, W. J., Ivanov, V. V., Koshelev, K. N., Krivtsun, V. M., Lee, C. J., Lopaev, D. V., Yakushev, O.   +8 more
core   +18 more sources

Wet Chemical and Plasma Etching of Photosensitive Glass

Solids, 2023
Photosensitive glasses for radiation-induced 3D microstructuring, due to their optical transparency and thermal, mechanical, and chemical resistance, enable the use of new strategies for numerous microscale applications, ranging from optics to biomedical
Ulrike Brokmann, Christoph Weigel, Luisa-Marie Altendorf, Steffen Strehle, Edda Rädlein   +4 more
doaj   +1 more source

Formation of Functional Silicon Nitride Layers by Selective Plasmochemical Etching

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2022
At present, with the development of nanotechnology, plasma-chemical etching remains practically the only tool for transferring an integrated circuit pattern in a masking layer to a substrate material due to the fact that the pattern transfer accuracy is ...
V. V. Emelyanov
doaj   +1 more source

Advances in precision freeform manufacturing by plasma jet machining -INVITED [PDF]

EPJ Web of Conferences, 2020
Atmospheric pressure plasma jet machining technology provides a flexible and efficient way to fabricate precise freeform optics. Due to the pure chemical material removal mechanism based on a dry etching process using fluorine containing gas, the choice ...
Arnold Thomas, Boehm Georg, Kazemi Faezeh   +2 more
doaj   +1 more source

Analytical model of plasma-chemical etching in planar reactor [PDF]

Journal of Physics: Conference Series, 2016
The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy.
D S Veselov, A D Bakun, Yu A Voronov, V Yu Kireev, O V Vasileva   +4 more
openaire   +1 more source

FEATURES OF PLASMA CHEMICAL ETCHING OF LITHIUM TANTALATE SUBSTRATE (LiTaO3)

Problems of Atomic Science and Technology, 2021
The results of researches of plasma chemical treatment of lithium monocrystalline tantalate (LiTaO3) from gas type, bias voltage (energy of chemically active ions) and from current of additional bias generator are given. A closed-loop electron drift plasma chemical reactor and gas mixtures containing Ar, Ar + ClС4, and Ar + SF6 were used for the ...
O.A. Fedorovich, O.V. Hladkovska, V.V. Hladkovskyi, A.F. Nedybaliuk   +3 more
openaire   +1 more source

Plasma chemical silicon etching process*

IOP Conference Series: Materials Science and Engineering, 2016
The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.
K V Rudenko, A V Miakonkih, A E Rogojin, S V Bogdanov, V G Sidorov, I V Kovalev   +5 more
openaire   +1 more source

Anisotropic plasma-chemical etching by an electron-beam-generated plasma [PDF]

Journal of Applied Physics, 1988
Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150–300 eV) electron beam in a He+CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma.
T. R. Verhey, J. J. Rocca, P. K. Boyer
openaire   +1 more source

Influence of vacuum-plasma treatment modes on the surface photo-EMF of single-crystal silicon

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2022
Plasma technologies in the last quarter of the twentieth century made a real scientific and technological revolution in microelectronics. Having come to the world of microelectronics technology as a necessary alternative to liquid etching, which had ...
R.R. Nagaplezheva, M.M. Orakova, M.Yu. Kushkhova, F.M. Tseeva, H.A. Mishaev   +4 more
doaj   +1 more source

Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching

Micromachines, 2023
In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was ...
Shaozhen Xu, Julong Yuan, Jianxing Zhou, Kun Cheng, Hezhong Gan   +4 more
doaj   +1 more source