Results 11 to 20 of about 22,802 (264)

Analytical model of plasma-chemical etching in planar reactor [PDF]

Journal of Physics: Conference Series, 2016
The paper discusses an analytical model of plasma-chemical etching in planar diode- type reactor. Analytical expressions of etch rate and etch anisotropy were obtained. It is shown that etch anisotropy increases with increasing the ion current and ion energy.
D S Veselov, A D Bakun, Yu A Voronov, V Yu Kireev, O V Vasileva   +4 more
openaire   +1 more source

Plasma chemical silicon etching process*

IOP Conference Series: Materials Science and Engineering, 2016
The cryogenic plasma chemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.
K V Rudenko, A V Miakonkih, A E Rogojin, S V Bogdanov, V G Sidorov, I V Kovalev   +5 more
openaire   +1 more source

FEATURES OF PLASMA CHEMICAL ETCHING OF LITHIUM TANTALATE SUBSTRATE (LiTaO3)

Problems of Atomic Science and Technology, 2021
The results of researches of plasma chemical treatment of lithium monocrystalline tantalate (LiTaO3) from gas type, bias voltage (energy of chemically active ions) and from current of additional bias generator are given. A closed-loop electron drift plasma chemical reactor and gas mixtures containing Ar, Ar + ClС4, and Ar + SF6 were used for the ...
O.A. Fedorovich, O.V. Hladkovska, V.V. Hladkovskyi, A.F. Nedybaliuk   +3 more
openaire   +1 more source

Anisotropic plasma-chemical etching by an electron-beam-generated plasma [PDF]

Journal of Applied Physics, 1988
Anisotropic etching of SiO2 has been achieved with a plasma generated by a broad-area low-energy (150–300 eV) electron beam in a He+CF4 atmosphere. Etch rates of up to 330 Å/min for SiO2 and 220 Å/min for Si were obtained. Etching occurred with good uniformity over the entire area exposed to the electron-beam-generated plasma.
T. R. Verhey, J. J. Rocca, P. K. Boyer
openaire   +1 more source

Evolution of surface morphology and properties of diamond films by hydrogen plasma etching

Green Processing and Synthesis, 2023
The micron-scale diamond film was prepared using hydrogen and methane as the mixed gas supplies via self-developed 3 kW/2,450 MHz microwave plasma chemical vapor deposition (MPCVD) equipment.
Chu Genjie, Li Sijia, Gao Jiyun, Yang Li, Hou Ming, Guo Shenghui   +5 more
doaj   +1 more source

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

Al-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham, Jamoliddin Razzokov, Eldor Karimbaev, Raghad S. Mohammed   +3 more
doaj   +1 more source

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma

Materials Research Express, 2020
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC ...
Liting Zhang, Young-Hee Joo, Doo-Seung Um, Chang-Il Kim   +3 more
doaj   +1 more source

Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the ...
Fedorovich O. A., Kruglenko M. P., Polozov B. P.   +2 more
doaj   +2 more sources

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

Communications Materials, 2021
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical ...
Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee   +9 more
doaj   +1 more source

Reactive Ion Etching of X-Cut LiNbO₃ in an ICP/TCP System for the Fabrication of an Optical Ridge Waveguide

Applied Sciences, 2023
In this study, the technology for producing ridge waveguides with a minimal roughness of the sidewalls and material surface in a near-waveguide region was developed with the purpose of fabricating miniature photonic integrated circuits on a LiNbO3 ...
Andrei Kozlov, Dmitrii Moskalev, Uliana Salgaeva, Anna Bulatova, Victor Krishtop, Anatolii Volyntsev, Alexander Syuy   +6 more
doaj   +1 more source