Plasma removal of Parylene C [PDF]
, 2008 Parylene C, an emerging material in microelectromechanical systems, is of particular interest in biomedical and lab-on-a-chip applications where stable, chemically inert surfaces are desired.
Li, Po-Ying, Meng, Ellis, Tai, Yu-Chong
core +1 more source
Guidelines for etching silicon MEMS structures using fluorine high-density plasmas at cryogenic temperatures [PDF]
, 2002 This paper presents guidelines for the deep reactive ion etching (DRIE) of silicon MEMS structures, employing SF/sub 6//O/sub 2/-based high-density plasmas at cryogenic temperatures.
Boer, Meint J. de +6 more
core +2 more sources
Atomic layer etching of SiO2 with Ar and CHF 3 plasmas: A self-limiting process for aspect ratio independent etching [PDF]
, 2019 With ever increasing demands on device patterning to achieve smaller critical dimensions, the need for precise, controllable atomic layer etching (ALE) is steadily increasing.
Cabrini, S +8 more
core +1 more source
Advanced Etching Techniques of LiNbO3 Nanodevices
Nanomaterials, 2023 Single LiNbO3 (LNO) crystals are widely utilized in surface acoustic wave devices, optoelectronic devices, and novel ferroelectric memory devices due to their remarkable electro-optic and piezoelectric properties, and high saturation and remnant ...
Bowen Shen +7 more
doaj +1 more source
Micromachining of buried micro channels in silicon [PDF]
, 2000 A new method for the fabrication of micro structures for fluidic applications, such as channels, cavities, and connector holes in the bulk of silicon wafers, called buried channel technology (BCT), is presented in this paper.
Berenschot, J.W. (Erwin) +7 more
core +3 more sources
Diode Circuit-based Glass Plasma-Chemical Etching Capabilities
Mechanical Engineering and Computer Science, 2017 The paper discusses technological capabilities to improve a plasma-chemical etching (PCE) rate of the silicate glasses through a chromium mask in the equipment with a planar inductor located outside, which forms a high-frequency diode system. Suggests a case when the inductor in the form of a planar spiral antenna is above the work-piece.The PCE ...
K. N. Bugorkov, H. R. Saghatelyan
openaire +1 more source
Micro-texturing into DLC/diamond coated molds and dies via high density oxygen plasma etching
Manufacturing Review, 2015 Diamond-Like Carbon (DLC) and Chemical Vapor Deposition (CVD)-diamond films have been widely utilized not only as a hard protective coating for molds and dies but also as a functional substrate for bio-MEMS/NEMS.
Yunata Ersyzario Edo, Aizawa Tatsuhiko
doaj +1 more source
The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control [PDF]
, 1994 Very deep trenches (up to 200 µm) with high aspect ratios (up to 10) in silicon and polymers are etched using a fluorine-based plasma (SF6/O2/CHF3). Isotropic, positively and negatively (i.e.
de Boer, Meint J. +4 more
core +4 more sources
High aspect ratio silicon dioxide-coated single-walled carbon nanotube scanning probe nanoelectrodes [PDF]
, 2009 We have fabricated high aspect ratio, hydrophilic nanoelectrodes from individual single-walled carbon nanotubes (SWNTs) mounted on conductive atomic force microscope (AFM) tips for use as electrochemical probes.
Ceres, Donato M. +4 more
core +2 more sources
RESEARCH PROCESS PLASMA ETCHING SIO2 MEMBRANE
Вестник Дагестанского государственного технического университета: Технические науки, 2016 The article discusses the results of plasma chemical etching of silicon dioxide in the fluorine-containing medium in the manufacture of semiconductor devices.
T. A. Ismailov +3 more
doaj +1 more source