Results 31 to 40 of about 22,802 (264)

Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions

AIP Advances, 2017
We focused on inductively coupled plasma and reactive ion etching (ICP–RIE) for etching GaN and tried to fabricate distinctive GaN structures under optimized chemical etching conditions.
N. Okada, K. Nojima, N. Ishibashi, K. Nagatoshi, N. Itagaki, R. Inomoto, S. Motoyama, T. Kobayashi, K. Tadatomo   +8 more
doaj   +1 more source

Influence of Surface Finish on the Tribological Performance of AlTiBN Coatings Deposited on Forming Tools

Advanced Engineering Materials, EarlyView.
Aluminum and nitride coatings are used in industry because they are hard, resist wear, and protect against oxidation. Adding boron can improve friction behavior and other properties. This study tests coatings on surfaces with different finishes. Results show smoother surfaces perform better, while rough ones wear faster, although coatings can reduce ...
Adrián Claver, Iker Alfonso, Eneko Barba, Javier León, José Antonio García, Iñaki Zalakain, Iván Fernández Martínez, Arley García‐Carrero, Christian Almeyda, Daniel Salcedo   +9 more
wiley   +1 more source

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Proceedings, 2017
Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ...
Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto   +12 more
doaj   +1 more source

A Dislocation Perspective on Strength and Toughness in Ceramics

Advanced Engineering Materials, EarlyView.
Dislocations in ceramics enjoy a long but yet under‐appreciated history. The three research waves for dislocations in ceramics highlight the topic evolution over the last 90 years. This review focuses on the impact of dislocation on strength and toughness in ceramics.
Xufei Fang
wiley   +1 more source

Resistance abilities of （100）/（111）-faceted diamond films against oxygen plasma etching

Journal of Aeronautical Materials, 2019
The resistance abilities of (100) and (111)-faceted diamond films against oxygen plasma, 100 μm as film thickness, were investigated by the microwave power chemical vapor deposition (MPCVD) technique.
SUN Qi, WANG Jianhua, CHENG Chong, CHEN Xianglei, WU Rongjun, LIU Dan, ZHU Jiao   +6 more
doaj   +1 more source

Influence of Si Content and Milling Duration on the Microstructure and Mechanical–Tribological Properties of AlCoCrFeNiSi High‐Entropy Alloys

Advanced Engineering Materials, EarlyView.
Si‐doped AlCoCrFeNi high‐entropy alloys are synthesized by mechanical alloying to reveal the effect of Si content and milling time on phase evolution, microstructural refinement, and tribological behavior. A transition from FCC to BCC structure, significant grain refinement, and enhanced hardness and wear resistance are achieved, with the 4 at% Si ...
Mustafa Okumuş, Mehmet Emin Demir, Sercan Özpınar   +2 more
wiley   +1 more source

Composites of Shellac and Silver Nanowires as Flexible, Biobased, and Corrosion‐Resistant Transparent Conductive Electrodes

Advanced Functional Materials, EarlyView.
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein, Tiago Carneiro Gomes, Eliza Ng, Simon Rondeau‐Gagné, Tricia Breen Carmichael   +4 more
wiley   +1 more source

Plasma-chemical etching of gallium nitride epitaxial structures

Технологія та конструювання в електронній апаратурі, 2005
The results of plasma-chemical etching of gallium nitride epitaxial structures on sapphire substrates are presented. Etching was carried out in a plasma-chemical reactor with closed electron drift.
A. G. Borisenko, B. P. Polozov, O. A. Fedorovich, M. S. Boltovets, V. N. Ivanov, Yu. N. Sveschnikov   +5 more
doaj  

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Assessment of surface roughness of substrates subjected to plasma-chemical etching

Journal of Physics: Conference Series, 2014
The model based on fractional Brownian surface for substrate surface roughness assessment subjected to plasma-chemical etching is proposed.
M S Glyanko, A V Volkov, S A Fomchenkov
openaire   +1 more source