Results 21 to 30 of about 6,644,773 (301)

Evolution of surface morphology and properties of diamond films by hydrogen plasma etching

Green Processing and Synthesis, 2023
The micron-scale diamond film was prepared using hydrogen and methane as the mixed gas supplies via self-developed 3 kW/2,450 MHz microwave plasma chemical vapor deposition (MPCVD) equipment.
Chu Genjie, Li Sijia, Gao Jiyun, Yang Li, Hou Ming, Guo Shenghui   +5 more
doaj   +1 more source

Estimation of the Optimum Etching Time and Etching Parameters for CR-39 Nuclear Tracks Detector by Applying Plasma and Chemical Etching Techniques

Al-Mustansiriyah Journal of Science
Background: CR-39 nuclear track detectors are widely used in various fields, including science, technology, astronomy, and environmental preservation, to detect and register heavy ions, neutrons, and alpha particles.
Abdulkader Makki Dahham, Jamoliddin Razzokov, Eldor Karimbaev, Raghad S. Mohammed   +3 more
doaj   +1 more source

Metal-Assisted Plasma Etching of Silicon: A Liquid-Free Alternative to MACE [PDF]

, 2018
For decades, fabrication of semiconductor devices has utilized well-established etching techniques to create complex nanostructures in silicon. Of these, two of the most common are reactive ion etching in the gaseous phase and metal-assisted chemical ...
Benjamin Almquist, Julia Sun, Julia Sun (522241), Benjamin Almquist (5087000), Julia, Sun, Benjamin, Almquist   +5 more
core   +2 more sources

High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl2/Ar plasma

Materials Research Express, 2020
We investigated the etching characteristics of aluminum-doped zinc oxide (AZO) thin films in an adaptively coupled plasma (ACP) system. The dry etching characteristics of AZO films were studied by changing the Cl _2 /Ar gas mixing ratio, RF power, DC ...
Liting Zhang, Young-Hee Joo, Doo-Seung Um, Chang-Il Kim   +3 more
doaj   +1 more source

Spectroscopic Analysis of CF4/O2 Plasma Mixed with N2 for Si3N4 Dry Etching

, 2022
Silicon nitride (Si3N4) etching using CF4/O2 mixed with N2 has become very popular in 3D NAND flash structures. However, studies on Si3N4 dry etching based on optical emission spectroscopy (OES) are lacking; in particular, no study has reported the use ...
Sang Jeen Hong, Wan Soo Song, Ju Eun Kang   +2 more
core   +1 more source

Peculiarity of plasmachemical etching of silicon plate edges of photoelectric converters [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2009
Results of technological researches of plasmachemical reactor (PCR) for etching of silicon plate edges of photo-electric converters are described. Dependences of silicon etching speed on a discharge current, magnetic field intensity, quantity of the ...
Fedorovich O. A., Kruglenko M. P., Polozov B. P.   +2 more
doaj   +2 more sources

Evolution of defect formation during atomically precise desulfurization of monolayer MoS2

Communications Materials, 2021
Desulfurization of MoS2 alters its chemical and physical properties by breaking structural symmetry. Here, the atomic-scale mechanistic pathway by which this occurs is investigated during plasma etching, and changes in chemical structure and physical ...
Jong-Young Lee, Jong Hun Kim, Yeonjoon Jung, June Chul Shin, Yangjin Lee, Kwanpyo Kim, Namwon Kim, Arend M. van der Zande, Jangyup Son, Gwan-Hyoung Lee   +9 more
doaj   +1 more source

Reactive Ion Etching of X-Cut LiNbO₃ in an ICP/TCP System for the Fabrication of an Optical Ridge Waveguide

Applied Sciences, 2023
In this study, the technology for producing ridge waveguides with a minimal roughness of the sidewalls and material surface in a near-waveguide region was developed with the purpose of fabricating miniature photonic integrated circuits on a LiNbO3 ...
Andrei Kozlov, Dmitrii Moskalev, Uliana Salgaeva, Anna Bulatova, Victor Krishtop, Anatolii Volyntsev, Alexander Syuy   +6 more
doaj   +1 more source

Assessment of surface roughness of substrates subjected to plasma-chemical etching

Journal of Physics: Conference Series, 2014
The model based on fractional Brownian surface for substrate surface roughness assessment subjected to plasma-chemical etching is proposed.
M S Glyanko, A V Volkov, S A Fomchenkov
openaire   +1 more source

Studies on etching and polymer deposition in halocarbon plasmas [PDF]

, 1987
Plasma etching, the selective removal of materials by reaction with chemically active species formed in a glow-discharge, is widely used by the electronics industry because of the advantages over 'wet' processes. The full potential has yet to be realised
Astell-Burt, P. J., Astell-Burt, Peter J.   +1 more
core   +1 more source