Results 41 to 50 of about 22,802 (264)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

The influence of surface modification processes on the airtightness of copper sheet inserts

open access: yesAIP Advances
This study addresses the demand for improving the airtightness of copper sheet inserts in new energy vehicles by conducting surface treatments on copper sheets before injection molding.
Yiming Wen   +10 more
doaj   +1 more source

Long-term oxygen plasma etching of UDMA:TEGDMA methacrylate resin: Etching rate and physical property changes

open access: yesPolymer Testing
The effect of low-pressure oxygen plasma etching on the physical properties of a dental photopolymer, namely UDMA:TEGDMA in 3:1 wt ratio, was investigated.
Alexandra Borók   +4 more
doaj   +1 more source

SF6 Optimized O2 Plasma Etching of Parylene C

open access: yesMicromachines, 2018
Parylene C is a widely used polymer material in microfabrication because of its excellent properties such as chemical inertness, biocompatibility and flexibility.
Lingqian Zhang   +3 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Dry Phosphorus silicate glass etching and surface conditioning and cleaning for multi-crystalline silicon solar cell processing

open access: yesSolar Energy and Sustainable Development, 2014
As an alternative to the wet chemical etching method, dry chemical etching processes for Phosphorus silicate glass [PSG} layer rel11ova] using Trifluormethane/Sulfur Hexafluoride (CHF3/ SF6) gas mixture in commercial silicon-nitride plasma enhanced ...
Ahmed S. Kagilik
doaj  

Digital Etching of Molybdenum Interconnects Using Plasma Oxidation

open access: yesAdvanced Materials Interfaces
Molybdenum (Mo) has a high potential of becoming the material of choice for sub‐10 nm scale metal structures in future integrated circuits (ICs). Manufacturing at this scale requires exceptional precision and consistency, so many metal processing ...
Ivan Erofeev   +13 more
doaj   +1 more source

Multimodal Soft Surgical Robots Enabled by Eco‐Degradable, Sterilizable Polymers and Transient Electronics

open access: yesAdvanced Functional Materials, EarlyView.
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe, 
Minseong Chae   +27 more
wiley   +1 more source

EFFECT OF OXYGEN ON SI ETCH PROFILE USING DC SF6 PLASMA MICROMACHINING

open access: yesDiyala Journal of Engineering Sciences, 2010
Plasma etching with tapered profile structure (high aspect ratio structures) in silicon is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to
Shrok Abdullah
doaj  

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben   +6 more
wiley   +1 more source

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