Results 91 to 100 of about 18,025 (163)

A novel approach of chemical mechanical polishing for cadmium zinc telluride wafers. [PDF]

Sci Rep, 2016
Zhang Z, Wang B, Zhou P, Kang R, Zhang B, Guo D.   +5 more
europepmc   +1 more source

Effect of OH^- on chemical mechanical polishing of β-Ga₂O₃ (100) substrate using an alkaline slurry. [PDF]

RSC Adv, 2018
Huang C, Mu W, Zhou H, Zhu Y, Xu X, Jia Z, Zheng L, Tao X.   +7 more
europepmc   +1 more source

KDP Aqueous Solution-in-Oil Microemulsion for Ultra-Precision Chemical-Mechanical Polishing of KDP Crystal. [PDF]

Materials (Basel), 2017
Dong H, Wang L, Gao W, Li X, Wang C, Ji F, Pan J, Wang B.   +7 more
europepmc   +1 more source

Abrasive for Chemical Mechanical Polishing

, 2018
openaire   +3 more sources

Precision Plasma Electrolytic Polishing of GH3536 Superalloy for Effective Surface Performance Improvement. [PDF]

Materials (Basel)
Peng C, Wu S, Wang X, Zhang C, Sun J, Song J.   +5 more
europepmc   +1 more source

Fusion of Physical Mechanism and Data-Driven Methods for Online Thickness Measurement and Error Compensation in SiC CMP. [PDF]

Micromachines (Basel)
Lin J, Chen T, Ren Y, Song Z, Lyu B, Yuan J, Zhao W.   +6 more
europepmc   +1 more source

Polishing dental ceramics using shear-thickening slurry. [PDF]

Sci Rep
Zhou Z, Zhu L, Wang J, Dong X.
europepmc   +1 more source

High-Efficiency and Low-Defect Removal Mechanism of Silicon Carbide Using Center-Inlet Computer-Controlled Polishing. [PDF]

Micromachines (Basel)
Lei P, Ji B, Hou J, Liu M, Deng W, Fan F, Wang J, Zhong B.   +7 more
europepmc   +1 more source

A High-Efficiency Environmentally Friendly Polishing Slurry for K9 Glass Utilizing Cerium-Based Compounds. [PDF]

Molecules
Li S, Ye R, Zou Z, He Z, Feng K, Cui H, Chi R, Chen Y, Luo Y.   +8 more
europepmc   +1 more source

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Surface Conformable Polishing Mechanism for Chemical Mechanical Polishing

Journal of The Electrochemical Society, 2009
Surface conformable polishing mechanism, which means a uniform removal mechanism conforming to wafer thickness variation, was developed for chemical mechanical polishing. The polishing mechanism provides both global uniform removal regardless of wafer curvature and local planarization to protruding parts on a patterned surface.
Takashi Fujita, Junji Watanabe
openaire   +1 more source