Results 1 to 10 of about 1,061 (174)
Objectives: Single crystal silicon carbide (SiC) is known for its high hardness and high chemical inertness, making it chanllenging to process effectively using traditional chemical mechanical polishing (CMP) methods.
Zhibin GU +4 more
doaj +1 more source
Diamond surfaces must be of high quality for potential use in semiconductors, optical windows, and heat conductivity applications. However, due to the material’s exceptional hardness and chemical stability, it can be difficult to obtain a smooth surface ...
Zewei Yuan, Zhihui Cheng, Yusen Feng
doaj +1 more source
The rational design of high-performance ceria (CeO2) polishing abrasives is largely constrained by the unclear correlation between crystal plane exposure, dynamic oxygen vacancy evolution, and the chemical-mechanical synergistic mechanism during chemical
Xin Li +11 more
doaj +1 more source
A Basic Study on Chemical Mechanical Polishing (CMP)
Akiyoshi ODA +3 more
openaire +2 more sources
The stability of slurries used for chemical mechanical polishing (CMP) is a crucial concern in industrial chip production, influencing both the quality and cost-effectiveness of polishing fluids.
Yi Xing +3 more
doaj +1 more source
A Study of Pad Conditioning in CMP(Chemical-Mechanical Polishing)
Kamikawa, Daichi +3 more
openaire +1 more source
Chemical Mechanical Lapping of 316 Based on Solid-Phase Fenton Reaction. [PDF]
Guo L +6 more
europepmc +1 more source
Synergistic Effects of Ceria Morphology in Magnetically-Assisted Chemical Mechanical Polishing: A Dual-Component Approach for Ultraprecision Surface Planarization. [PDF]
Wang H +6 more
europepmc +1 more source
Lapping of Soft-Brittle Lithium Niobate Crystal with Fixed Abrasive Pad. [PDF]
Zhu N, Gao X, Tang C, Chen J, Zhu Y.
europepmc +1 more source

