Results 1 to 10 of about 14,575 (156)
Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review [PDF]
Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the
Haedo Jeong +2 more
exaly +3 more sources
Research on influences of contact force in chemical mechanical polishing (CMP) process
A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM).
Lei Han +5 more
doaj +2 more sources
Fluidized bed machining (FBM) is used for the surface finishing or cleaning of complex 3D machine parts. FBM is a process of injecting air into a chamber to encourage particles into a fluid-like state.
Taekyoung Kim, Hyunseop Lee
doaj +3 more sources
Achieving high‐throughput, low‐damage preparation of indium phosphide (InP) surfaces remains challenging because increasing the material removal rate (MRR) in chemical mechanical polishing (CMP) often compromises ultralow roughness and requires post‐CMP ...
Shigong Fu +5 more
doaj +2 more sources
Chemical mechanical polishing/planarization (CMP) is an essential manufacturing process in semiconductor technologies. This method combines chemical and mechanical forces to smooth the surfaces of wafers.
Woonjung Kim
exaly +2 more sources
For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim +7 more
doaj +1 more source
Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper
Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles.
Seonghyun Park, Hyunseop Lee
doaj +1 more source
Effect of Hydrogen Peroxide and Oxalic Acid on Material Removal in Al CMP [PDF]
Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum.
Jin Yeop Jeong +3 more
doaj +1 more source
Optimization of CMP processing parameters for Si based on response surface method
To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology.
BIAN Da +4 more
doaj +3 more sources

