Chemical mechanical polishing cmp

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Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review [PDF]

International Journal of Precision Engineering and Manufacturing-Green Technology, 2021
Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment.
Lee H, Kim H, Jeong H.
europepmc +5 more sources

Effect of slurry composition on the chemical mechanical polishing of thin diamond films [PDF]

Science and Technology of Advanced Materials, 2017
Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective
Jessica M. Werrell +7 more
doaj +2 more sources

Research on the Application of Diamond Film in Chemical Mechanical Polishing [PDF]

Nanomaterials
Polishing pad conditioners are of critical importance in chemical mechanical polishing (CMP), acting as a key determinant of CMP efficiency and an indispensable consumable in the polishing process.
Yibao Wang +10 more
doaj +2 more sources

A Comprehensive Review of the Nano-Abrasives Key Parameters Influencing the Performance in Chemical Mechanical Polishing [PDF]

Nanomaterials
Chemical Mechanical Polishing (CMP) is a critical process in many industries where achieving superior surface quality through controlled material removal rates by using nano-abrasives is essential.
Houda Bellahsene +5 more
doaj +2 more sources

Investigation of the Visible Photocatalytic–Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology [PDF]

Micromachines
The third-generation semiconductor single-crystal silicon carbide (SiC), as a typical difficult-to-machine material, improves the chemical reaction rate on the SiC surface during the polishing process, which is key to realizing efficient chemical ...
Zijuan Han, Bo Ran, Jisheng Pan, Rongji Zhuang +3 more
doaj +2 more sources

Chemical mechanical polishing as an alternative surface treatment technique for corrosion prevention of carbon steel in an acidic medium [PDF]

Scientific Reports
Chemical mechanical polishing (CMP) has been a standard technique in semiconductor manufacturing for achieving smooth surfaces. CMP utilizes a synergistic interplay of chemical and mechanical interactions to achieve the desired removal rates, selectivity,
Mohamed Ahmed +6 more
doaj +2 more sources

Monodisperse SiO₂ Spheres: Efficient Synthesis and Applications in Chemical Mechanical Polishing [PDF]

Nanomaterials
The atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface.
Jinlong Ge +7 more
doaj +2 more sources

The Chemical Deformation of a Thermally Cured Polyimide Film Surface into Neutral 1,2,4,5-Benzentetracarbonyliron and 4,4′-Oxydianiline to Remarkably Enhance the Chemical–Mechanical Planarization Polishing Rate [PDF]

Nanomaterials
The rapid advancement of 3D packaging technology has emerged as a key solution to overcome the scaling-down limitation of advanced memory and logic devices.
Man-Hyup Han +10 more
doaj +2 more sources

Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness [PDF]

Nanomaterials
To satisfy the superior surface quality requirements in the fabrication of HBM (High-Bandwidth Memory) and 3D NAND Flash Memory, high-efficiency Si chemical mechanical planarization (CMP) is essential.
Min-Uk Jeon +9 more
doaj +2 more sources

W-CMP for sub-micron inverse metallisation [PDF]

, 1997
Chemical Mechanical Polishing (CMP) of tungsten for an inverse metallisation scheme is investigated. The influence of CMP parameters on removal rate and uniformity is studied. The main effects on the removal rate are the applied pressure and the rotation
Corbach, Herman D. van +3 more
core +25 more sources

chemical mechanical polishing
surface roughness
material removal rate

6. clean water
silicon carbide