Results 11 to 20 of about 1,061 (174)

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review [PDF]

open access: yesInternational Journal of Precision Engineering and Manufacturing-Green Technology, 2021
Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment.
Lee H, Kim H, Jeong H.
europepmc   +4 more sources

Research on the Application of Diamond Film in Chemical Mechanical Polishing [PDF]

open access: yesNanomaterials
Polishing pad conditioners are of critical importance in chemical mechanical polishing (CMP), acting as a key determinant of CMP efficiency and an indispensable consumable in the polishing process.
Yibao Wang   +10 more
doaj   +2 more sources

A Comprehensive Review of the Nano-Abrasives Key Parameters Influencing the Performance in Chemical Mechanical Polishing [PDF]

open access: yesNanomaterials
Chemical Mechanical Polishing (CMP) is a critical process in many industries where achieving superior surface quality through controlled material removal rates by using nano-abrasives is essential.
Houda Bellahsene   +5 more
doaj   +2 more sources

Chemical mechanical polishing as an alternative surface treatment technique for corrosion prevention of carbon steel in an acidic medium [PDF]

open access: yesScientific Reports
Chemical mechanical polishing (CMP) has been a standard technique in semiconductor manufacturing for achieving smooth surfaces. CMP utilizes a synergistic interplay of chemical and mechanical interactions to achieve the desired removal rates, selectivity,
Mohamed Ahmed   +6 more
doaj   +2 more sources

Investigation of the Visible Photocatalytic–Fenton Reactive Composite Polishing Process for Single-Crystal SiC Wafers Based on Response Surface Methodology [PDF]

open access: yesMicromachines
The third-generation semiconductor single-crystal silicon carbide (SiC), as a typical difficult-to-machine material, improves the chemical reaction rate on the SiC surface during the polishing process, which is key to realizing efficient chemical ...
Zijuan Han   +3 more
doaj   +2 more sources

Monodisperse SiO2 Spheres: Efficient Synthesis and Applications in Chemical Mechanical Polishing [PDF]

open access: yesNanomaterials
The atomic level polishing of a material surface affects the accuracy of devices and the application of materials. Silica slurries play an important role in chemical mechanical polishing (CMP) by polishing the material surface.
Jinlong Ge   +7 more
doaj   +2 more sources

Preliminary Study on Fluidized Bed Chemical Mechanical Polishing (FB-CMP) Process for Stainless Steel 304 (SS304)

open access: yesMicromachines, 2020
Fluidized bed machining (FBM) is used for the surface finishing or cleaning of complex 3D machine parts. FBM is a process of injecting air into a chamber to encourage particles into a fluid-like state.
Taekyoung Kim, Hyunseop Lee
doaj   +3 more sources

The Chemical Deformation of a Thermally Cured Polyimide Film Surface into Neutral 1,2,4,5-Benzentetracarbonyliron and 4,4′-Oxydianiline to Remarkably Enhance the Chemical–Mechanical Planarization Polishing Rate [PDF]

open access: yesNanomaterials
The rapid advancement of 3D packaging technology has emerged as a key solution to overcome the scaling-down limitation of advanced memory and logic devices.
Man-Hyup Han   +10 more
doaj   +2 more sources

One‐Step, High‐Removal‐Rate and Low‐Damage Chemical Mechanical Polishing of InP Enabled by Hydrolysis Activated PF6− with In Situ Fluoride Passivation

open access: yesAdvanced Science
Achieving high‐throughput, low‐damage preparation of indium phosphide (InP) surfaces remains challenging because increasing the material removal rate (MRR) in chemical mechanical polishing (CMP) often compromises ultralow roughness and requires post‐CMP ...
Shigong Fu   +5 more
doaj   +2 more sources

Effects of Hydrolysis Reaction and Abrasive Drag Force Accelerator on Enhancing Si-Wafer Polishing Rate and Improving Si-Wafer Surface Roughness [PDF]

open access: yesNanomaterials
To satisfy the superior surface quality requirements in the fabrication of HBM (High-Bandwidth Memory) and 3D NAND Flash Memory, high-efficiency Si chemical mechanical planarization (CMP) is essential.
Min-Uk Jeon   +9 more
doaj   +2 more sources

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