Results 11 to 20 of about 6,173 (209)
Treating chemical mechanical polishing (CMP) wastewater by electro-coagulation-flotation process with surfactant [PDF]
Journal of Hazardous Materials, 2005 The effect of surfactants on the treatment of chemical mechanical polishing (CMP) wastewater by electro-coagulation-flotation (ECF) process was studied. Two surfactants, cetyltrimethylammonium bromide (CTAB) and sodium dodecylsulfate (SDS) were employed in this study to compare the effect of cationic (CTAB) and anodic (SDS) surfactants on ECF.
Hu, C.Y., Lo, S.L., Li, C.M., Kuan, W.H.
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Nanomaterials, 2021 For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim +7 more
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Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper
Applied Sciences, 2021 Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles.
Seonghyun Park, Hyunseop Lee
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Effect of Hydrogen Peroxide and Oxalic Acid on Material Removal in Al CMP [PDF]
한국정밀공학회지, 2017 Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum.
Jin Yeop Jeong +3 more
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Micromachines, 2020 After the development of 3D printing, the post-processing of the 3D-printed materials has been continuously studied, and with the recent expansion of the application of 3D printing, interest in it is increasing. Among various surface-machining processes,
Jungyu Son, Hyunseop Lee
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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Advanced Materials Interfaces, 2023 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang +6 more
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Optimization of CMP processing parameters for Si based on response surface method
Jin'gangshi yu moliao moju gongcheng, 2022 To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology.
Da BIAN +4 more
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Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications
ECS Journal of Solid State Science and Technology, 2021 Chemical mechanical polishing (CMP) is widely accepted as the best planarization technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide removal rates (RRs) and good planarity has been proposed for oxide CMP applications. In this study, three pads namely, Pad-1 (hard), Pad-2 (soft), and a commercial pad (hard) were used
N. B. Kenchappa +6 more
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A Review on Precision Polishing Technology of Single-Crystal SiC
Crystals, 2022 Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is
Gaoling Ma +5 more
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Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies
Micromachines, 2022 Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage.
Chi-Hsiang Hsieh +5 more
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