Results 31 to 40 of about 6,173 (209)

Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System

Applied Sciences, 2020
This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure
Chao-Chang A. Chen, Jen-Chieh Li, Wei-Cheng Liao, Yong-Jie Ciou, Chun-Chen Chen   +4 more
doaj   +1 more source

Double-walled carbon nanotube-based polymer composites for electromagnetic protection. [PDF]

, 2010
In this paper, we present a microwave absorber based on carbon nanotubes (CNT) dispersed inside a BenzoCycloButenw (BCB) polymer. The high aspect ratio and remarkable conductive characteristics of CNT give rise to good absorbing properties for ...
Bianco, Bordas, David Dubuc, Emmanuel Flahaut, Grenier, Katia Grenier, Pacchini, Said, Stauffer, Sébastien Pacchini, Yao   +10 more
core   +2 more sources

Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate [PDF]

Applied Sciences, 2019
The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates. The authors proposed a novel sapphire substrate polishing method that is based on the dielectrophoresis (DEP) effect.
Tianchen Zhao, Julong Yuan, Qianfa Deng, Kaiping Feng, Zhaozhong Zhou, Xu Wang   +5 more
openaire   +2 more sources

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Mechanical Engineering Journal, 2016
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI   +6 more
doaj   +1 more source

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Friction, 2023
The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing (CMP) process cannot be ignored. In this study, the material removal mechanism of cavitation in the polishing process was investigated in ...
Lei Xu, Kihong Park, Hong Lei, Pengzhan Liu, Eungchul Kim, Yeongkwang Cho, Taesung Kim, Chuandong Chen   +7 more
doaj   +1 more source

Engineering SiO2 Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing

KONA Powder and Particle Journal, 2023
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and
Ganggyu Lee, Kangchun Lee, Seho Sun, Taeseup Song, Ungyu Paik   +4 more
doaj   +1 more source

Investigation of Chemical Mechanical Polishing Slurry of magnesium alloy [PDF]

E3S Web of Conferences, 2023
To improve the surface roughness of magnesium alloy, we researched and developed a chemical mechanical polishing (CMP) solution for magnesium alloy, and the effect of sodium tartrate on the surface quality of magnesium alloy and the mechanism of action ...
Zhao Shicheng, Song Xiaoming, Zhang Renjie   +2 more
doaj   +1 more source

Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

Micromachines, 2023
Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness.
Fangxin Tian, Tongqing Wang, Xinchun Lu
doaj   +1 more source

Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad

Applied Sciences, 2021
The uniformity of the wafer in a chemical mechanical polishing (CMP) process is vital to the ultra-fine and high integration of semiconductor structures.
Hanchul Cho, Taekyung Lee, Doyeon Kim, Hyoungjae Kim   +3 more
doaj   +1 more source

Chemical-Mechanical Impact of Nanoparticles and pH Effect of the Slurry on the CMP of the Selective Layer Surfaces

Lubricants, 2017
This paper provides a tribochemical study of the selective layer surface by chemical mechanical planarization (CMP). CMP is used to remove excess material obtained in the process of selective transfer.
Filip Ilie, George Ipate
doaj   +1 more source