Results 21 to 30 of about 14,575 (156)

Soft Chemical Mechanical Polishing Pad for Oxide CMP Applications

ECS Journal of Solid State Science and Technology, 2021
Chemical mechanical polishing (CMP) is widely accepted as the best planarization technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide removal rates (RRs) and good planarity has been proposed for oxide CMP applications. In this study, three pads namely, Pad-1 (hard), Pad-2 (soft), and a commercial pad (hard) were used
N. B. Kenchappa, Ramtej Popuri, Ashwin Chockkalingam, Puneet Jawali, Shiyan Jayanath, Daniel Redfield, Rajeev Bajaj   +6 more
openaire   +1 more source

Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System

Applied Sciences, 2020
This study aims to develop a dynamic pad monitoring system (DPMS) for measuring the surface topography of polishing pad. Chemical mechanical planarization/polishing (CMP) is a vital process in semiconductor manufacturing. The process is applied to assure
Chao-Chang A. Chen, Jen-Chieh Li, Wei-Cheng Liao, Yong-Jie Ciou, Chun-Chen Chen   +4 more
doaj   +1 more source

High-efficiency planarization method combining mechanical polishing and atmospheric-pressure plasma etching for hard-to-machine semiconductor substrates

Mechanical Engineering Journal, 2016
A high-efficiency planarization technique for preprocessing before final polishing is needed for hard-to-machine wide-band-gap semiconductors, such as silicon carbide (SiC), gallium nitride, and diamond.
Yasuhisa SANO, Kousuke SHIOZAWA, Toshiro DOI, Syuhei KUROKAWA, Hideo AIDA, Tadakazu MIYASHITA, Kazuto YAMAUCHI   +6 more
doaj   +1 more source

Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing: Modeling and experiments

Friction, 2023
The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing (CMP) process cannot be ignored. In this study, the material removal mechanism of cavitation in the polishing process was investigated in ...
Lei Xu, Kihong Park, Hong Lei, Pengzhan Liu, Eungchul Kim, Yeongkwang Cho, Taesung Kim, Chuandong Chen   +7 more
doaj   +1 more source

High‐Efficiency Graphene‐Silicon Slot‐Waveguide Microring Modulator at 1.5 and 2 µm Wavelength Bands

Laser &Photonics Reviews, EarlyView.
E/O modulators typically face a trade‐off between bandwidth and modulation efficiency. An integrated E/O modulator is presented that simultaneously achieves wideband, large bandwidth, and high modulation efficiency operation by embedding a partially overlapped double‐layer graphene on a compact silicon slot‐waveguide microring resonator.
Chao Luan, Deming Kong, Yong Liu, Yunhong Ding, Hao Hu   +4 more
wiley   +1 more source

Study on Chemical Mechanical Polishing of Single-Crystal Diamond with a Novel Nicotinic Acid–Hydrogen Peroxide Green Slurry

Micromachines
Single-crystal diamond (SCD) has the characteristics of a hard surface and stable chemical properties, making it difficult to achieve ultra-smooth and ultra-low-damage surface polishing using conventional polishing slurries.
Jixiang Yi, Longxing Liao, Yiming Fang
doaj   +1 more source

Engineering SiO2 Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing

KONA Powder and Particle Journal, 2023
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and
Ganggyu Lee, Kangchun Lee, Seho Sun, Taeseup Song, Ungyu Paik   +4 more
doaj   +1 more source

Epitaxial Integration of III–V Membrane Photodetectors With Lateral p–i–n Junctions on the Silicon‐On‐Insulator Waveguide Platform

Laser &Photonics Reviews, EarlyView.
Epitaxial growth forms III–V membranes directly atop the silicon waveguide layer on SOI, while in‐plane in situ doping defines lateral p–i–n InP/InGaAs junctions in a single growth step. The membrane photodetectors achieve 50 Gb/s NRZ‐OOK operation.
Zhao Yan, Yifu Chen, Martin Ebert, Ka Ming Wong, Wenjie Wang, Tim Grieb, Florian F. Krause, Andreas Rosenauer, Graham T. Reed, David J. Thomson, Qiang Li   +10 more
wiley   +1 more source

A distinctive material removal mode in chemical mechanical polishing besides chemical bonding and mechanical plowing: Shear slipping

Friction
Layered materials, such as bismuth, offer exceptional properties for future integrated circuits (ICs). Research is underway to adapt these materials to conventional IC manufacturing processes, such as chemical mechanical polishing (CMP). However, the CMP
Yushan Chen, Liuyue Xu, Yuan Wu, Liao Zhou, Yuting Wei, Zihan Zheng, Hui Li, Liang Jiang, Linmao Qian   +8 more
doaj   +1 more source

Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

Micromachines, 2023
Endpoint detection is an important technology in chemical mechanical polishing (CMP), which is used to capture the material interface and compensate the variations of consumables and incoming wafer thickness.
Fangxin Tian, Tongqing Wang, Xinchun Lu
doaj   +1 more source