Results 21 to 30 of about 1,061 (174)
Atomic Step-Terrace Ordering Enables Unprecedentedly Low Pop-in Stress Scatter in GaN (0001). [PDF]
SmallStep–terrace GaN surfaces with monoatomic topography were realized using catalyst‐referred etching. On these surfaces, pop‐ins occurred at ideal strength with a record‐low stress scatter of 2.3%, providing compelling evidence that atomic‐scale surface ordering plays a critical role in triggering incipient plasticity. Atomic‐scale surface irregularities,
Oguri H +8 more
europepmc +2 more sources
Material Removal Characteristics of Abrasive-Free Cu Chemical-Mechanical Polishing (CMP) Using Electrolytic Ionization via Ni Electrodes. [PDF]
Micromachines (Basel), 2023 Lee H.
europepmc +2 more sources
Research on influences of contact force in chemical mechanical polishing (CMP) process
AIP Advances, 2015 A series of simulations of chemical mechanical polishing (CMP) were conducted to investigate the contact force between abrasive particles and specimens by using the finite element method (FEM).
Lei Han +5 more
doaj +2 more sources
Nanomaterials, 2021 For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechanical planarization (CMP) has rapidly evolved to increase the W-film surface polishing rate via Fenton-reaction acceleration and enhance nanoscale-abrasive
Seong-In Kim +7 more
doaj +1 more source
Electrolytically Ionized Abrasive-Free CMP (EAF-CMP) for Copper
Applied Sciences, 2021 Chemical–mechanical polishing (CMP) is a planarization process that utilizes chemical reactions and mechanical material removal using abrasive particles.
Seonghyun Park, Hyunseop Lee
doaj +1 more source
Effect of Hydrogen Peroxide and Oxalic Acid on Material Removal in Al CMP [PDF]
한국정밀공학회지, 2017 Chemical mechanical polishing achieves surface planarity through combined mechanical and chemical means. The role of the chemical reaction is very important in a metal CMP like aluminum.
Jin Yeop Jeong +3 more
doaj +1 more source
Micromachines, 2020 After the development of 3D printing, the post-processing of the 3D-printed materials has been continuously studied, and with the recent expansion of the application of 3D printing, interest in it is increasing. Among various surface-machining processes,
Jungyu Son, Hyunseop Lee
doaj +1 more source
Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers
Advanced Materials Interfaces, 2023 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones.
Wantang Wang +6 more
doaj +1 more source
Optimization of CMP processing parameters for Si based on response surface method
Jin'gangshi yu moliao moju gongcheng, 2022 To improve the polishing efficiency and precision, the optimum processing parameters of Si in the chemical mechanical polishing (CMP) process were analysed by CMP experiments and response surface methodology.
Da BIAN +4 more
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A Review on Precision Polishing Technology of Single-Crystal SiC
Crystals, 2022 Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) free is
Gaoling Ma +5 more
doaj +1 more source