Results 101 to 110 of about 18,025 (163)
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Mechanical Mechanisms of Chemical Mechanical Polishing
Advanced Materials Research, 2008This paper describes a mechanical mechanism of chemical mechanical polishing (CMP) and the model is applied to the polishing of silicon substrates by polyurethane pads and slurries containing fumed silica as is typically done in the manufacture of integrated circuits.
Steven Danyluk, Sum Huan Ng
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Tungsten Chemical Mechanical Polishing
Journal of The Electrochemical Society, 1998After chemical mechanical polishing (CMP) of oxides became a standard method for global planarization, the polishing of metals is now being embraced by manufacturing. Although tungsten CMP has been used for subhalf-micron technologies for quite some time, there is still a lack of theoretical understanding and modeling of the metal CMP processes.
Norbert Elbel +3 more
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Electro-chemical mechanical polishing of copper and chemical mechanical polishing of glass
Journal of Materials Processing Technology, 2004Abstract In IC and optical manufacturing some of the materials that are polished after grinding are Si, Ge, Pyrex and BK 7 glass. In the case of Al, Cu and W, they are deposited and are CMP polished. The polishing process used on IC wafers is chemical mechanical polishing (CMP) that has in built facilities for planarizing as well. There are two major
Venkatesh, Vasisht C. +2 more
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Mechanism of titanium–nitride chemical mechanical polishing*
Chinese Physics B, 2021During the preparation of the phase change memory, the deposition and chemical mechanical polishing (CMP) of titanium nitride (TiN) are indispensable. A new acidic slurry added with sodium hypochlorite (NaClO) as an oxidizer is developed for the CMP of TiN film.
Dao-Huan Feng +6 more
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2012
Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear ...
H. Y. Tsai, H. Hocheng, Y. L. Huang
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Chemical mechanical planarization (CMP) has emerged as an indispensable processing technique for planarization in submicron multilevel VLSI. An analytic model of the material removal rate is proposed for CMP. The effects of applied pressure and polishing velocity are derived by considering the chemical reaction as well as the mechanical bear-and-shear ...
H. Y. Tsai, H. Hocheng, Y. L. Huang
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Silicon Nitride Chemical Mechanical Polishing Mechanisms
Journal of The Electrochemical Society, 1998To elucidate the fundamentals of chemical mechanical polishing (CMP) of silicon nitride, low pressure chemical vapor deposited silicon nitride is analyzed by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy both before and after CMP, demonstrating the salient increase of oxygen content, amine species, and silanol groups ...
Y. Z. Hu, R. J. Gutmann, T. P. Chow
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Mechanism of Ge2Sb2Te5 chemical mechanical polishing
Applied Surface Science, 2012Abstract We report the exploration of Ge2Sb2Te5 (GST) chemical mechanical polishing (CMP) mechanism. Static etching experiments of GST film were first conducted in two typical silica-based slurries (pH 2 and pH 11). To investigate the chemical nature of GST in different chemical environments, solubility of GST in slurries and also the zeta potentials
Liangyong Wang +7 more
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Chemical-mechanical polishing of ores
Economic Geology, 1965A combination of mechanical abrasion and chemical solution, obtained by mixing various acids with suspensions of abrasives, may produce better polished surfaces, more free of pits and scratches, than abrasives alone.
Eugene N. Cameron +1 more
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Chemical Mechanical Polishing of InP
ECS Journal of Solid State Science and Technology, 2012Results of a detailed study of different parameters of the polishing process and their influence on the removal rates (RRs) of InP are presented. RRs with silica-based slurries as well as generation of PH3 were much higher in the acidic pH regions compared to those in basic pH regions.
Shivaji Peddeti +3 more
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Chemical Mechanical Polishing of GaN
Journal of The Electrochemical Society, 2008Chemical mechanical polishing of (0001) GaN has been demonstrated with sodium-hypochlorite-based solutions. Slurries including alumina abrasive provide an efficient means of planarization for both the Ga- and N-face that does not induce significant crystalline damage. Removal rates were found to be ∼ 50 nm/min and were equivalent for both polarities.
S. Hayashi, T. Koga, M. S. Goorsky
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