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The effect of tartaric acid in the deposition of Sb2S3 films by chemical spray pyrolysis
Materials Science in Semiconductor Processing, 2015Abstract Sb2S3 films grown by chemical bath deposition have been used as an absorber in extremely thin inorganic absorber solar cells. In the present work, Sb2S3 thin films were deposited by chemical spray pyrolysis. The aqueous spray solution consisted of SbCl3 (Sb=2 mmol/L), thiourea (S) and tartaric acid (TA) in molar ratios of Sb:S:TA=1:3:10 or 1:
Merike Kriisa +2 more
exaly +2 more sources
ZnS Thin Film Prepared by Using Chemical Spray Pyrolysis Method
, 2012 Zinc sulfide thin films were deposited on bare glass by the chemical spray pyrolysis technique. 10(-2) M Zinc acetate and 4 x 10(-2) M thiourea ((NH2)CS) were used as a precursor solution in this work. The temperature of the substrate was set at 350 degrees C. Deposited ZnS thin films show a hexagonal (wurtzite) phase structure. The crystalline quality
ERTUĞRUL, Mehmet +3 more
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Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures [PDF]
Journal of Physics and Chemistry of Solids, 2015 In2S3 thin films were deposited onto indium tin oxide-coated glass substrates by chemical spray pyrolysis while keeping the substrates at different temperatures. The structures of the sprayed In2S3 thin films were characterized by X-ray diffraction (XFD)
Bernabe Mari Soucase, MIGUEL Mollar
exaly +2 more sources
Copper sulfides by chemical spray pyrolysis process
Physica Scripta, 1997The chemistry of formation of copper sulfide and copper indium disulfide films by the chemical spray pyrolysis process has been investigated. It was established that the formation of copper sulfide films by the spray process of water solutions of CuCl2 and SC(NH2)2 passes through the stage of formation of intermediate complex compound Cu(SCN2H4)ClH2O ...
M Krunks, E Mellikov, O Bijakina
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Chemical spray pyrolysis of CuInSe2 thin films
Solar Cells, 1986Abstract Our purpose in this paper is to give a brief review of recent studies concerning the chemical spray pyrolysis of CuInSe2 thin films. We also present the results of our own work on this subject and we show that the crystallographic, electrical and optical properties of this material are strongly related to the fabrication conditions employed,
J. Bougnot, S. Duchemin, M. Savelli
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Properties of CuInGaSe thin films prepared by chemical spray pyrolysis
2010 7th International Conference on Electrical Engineering Computing Science and Automatic Control, 2010Polycrystalline films of semiconducting Cu(In 1−x Ga x )Se 2 (CIGS) quaternary alloy, one of the promising materials for photovoltaic applications, have been prepared by means of chemical spray pyrolysis (CSP). Copper, Indium and Gallium metal chlorides and Selenourea are used as constituent elements to prepare spray solution.
B. J. Babu +3 more
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2007 International Workshop on Physics of Semiconductor Devices, 2007
Nanocrystalline ZnO films were synthesized by a chemical spray pyrolysis of zinc acetate solution. The deposition temperature (450degC) was kept constant by obstructing the spray after regular intervals. The XRD patterns of ZnO films were preferably oriented along c-axis (0 0 2) plane with the hexagonal wurtzite structure.
C. M. Mahajan, M. G. Takwale
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Nanocrystalline ZnO films were synthesized by a chemical spray pyrolysis of zinc acetate solution. The deposition temperature (450degC) was kept constant by obstructing the spray after regular intervals. The XRD patterns of ZnO films were preferably oriented along c-axis (0 0 2) plane with the hexagonal wurtzite structure.
C. M. Mahajan, M. G. Takwale
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Physical properties of AgInS2 films prepared by chemical spray pyrolysis
Thin Solid Films, 2001Abstract We have prepared AgInS2 thin films by the spray pyrolysis technique. The effects of the growth temperature and the chemical composition of the solution on the structural, optical and electrical properties of the films have been studied. It was found that growth temperatures above 400°C lead to single-phase chalcopyrite type AgInS2 films, but
Mauricio Ortega-López +2 more
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Selenization of CIS and CIGS layers deposited by chemical spray pyrolysis
Journal of Materials Science: Materials in Electronics, 2018Cu(In1 − xGax)Se2 (CIGS) thin films with x = 0 (CIS) and x = 0.3 (CIGS) were prepared on Mo-coated glass substrate by using chemical spray pyrolysis at a substrate temperature of 350 °C, followed by selenization treatment at 550 °C in selenium environment under N2 gas flow.
B. J. Babu, B. Egaas, S. Velumani
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Deposition of p-type NiO films by chemical spray pyrolysis
Vacuum, 2014Abstract NiO films were fabricated by spray pyrolysis method using aqueous and alcohol based solutions of Ni chloride and acetate, and growth temperatures in the range of 350–500 °C. Films are of cubic NiO phase, the crystallite size increases and film thickness decreases with the film growth temperature.
M. Krunks +4 more
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