Results 91 to 100 of about 104,686 (214)

GaN Stress Evolution During Metal-Organic Chemical Vapor Deposition

, 2009
The evolution of stress in gallium nitride films on sapphire has been measured in real- time during metal organic chemical vapor deposition. In spite of the 161%0 compressive lattice mismatch of GaN to sapphire, we find that GaN consistently grows in ...
Amano, H.; Chason, E.; Figiel, J.; Floro, J.A.; Han, J.; Hearne, S.; Hunter, J.; Tsong, I.
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Strain-relaxed, high Ge content, SiGe layers grown on Si (100) substrate by reduced pressure - chemical vapour deposition (RP-CVD) [PDF]

A different approach was taken to relieve strain from a high Germanium (Ge) content, Silicon-Germanium (SiGe) layers on a Silicon (Si) (100) substrate by growing a thin Ge under-layer between substrate and layer.
Alabdulali, Haitham
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Low‐temperature chemical vapor deposition growth of 2D materials

Electron
Two‐dimensional (2D) materials have atomic thickness, and thickness‐dependent electronic transport, optical and thermal properties, highlighting great promise applications in future semiconductor devices.
Minting Lei, Peijian Wang, Xiaofeng Ke, Jun Xie, Min Yue, Mei Zhao, Kenan Zhang, Youqing Dong, Quanlong Xu, Chao Zou, Shun Wang, Lijie Zhang   +11 more
doaj   +1 more source

Microstructure of SiOx : H films prepared by plasma enhanced chemical vapor deposition

, 2000
The micro-Raman spectroscopy and infrared (IR) spectroscopy have been performed for the study of the microstructure of amorphous hydrogenated oxidized silicon (alpha-SiOx,:H) films prepared by Plasma Enhanced Chemical Vapor Deposition technique.
Kong GL, Ma ZX, Ma ZX,Chinese Acad Sci,Ctr Condensed Matter Phys,Inst Semicond,State Key Lab Surface Phys,Beijing 100083,Peoples R China., Chu JH, Liao XB   +4 more
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High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

, 2008
Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma.
Zhou, YQ, Liu, JL, Zhou, BQ, Zhu, MF, Liu, FZ, Ding, K, Li, GH, Zhou, BQ, Inner Mongolia Normal Univ, Coll Phys & Elect Informat, Hohhot 010022, Peoples R China. 电子邮箱地址: zhoubq@imnu.edu.cn   +7 more
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Chemical vapor deposition growth and characterization of ReSe₂. [PDF]

Nanoscale Adv
Onasanya J, Benamara M, Moorthi K, Churchill HOH, Hamad B, Manasreh MO.   +5 more
europepmc   +1 more source

Computational Modeling and Experimental Validation of Variabilities in Chemical Vapor Deposition of Graphene on Metals. [PDF]

Small
Joshi T, Raman RKS, Ventikos Y.
europepmc   +1 more source

Flexible Polypyrrole-Based pH Sensors via Oxidative Chemical Vapor Deposition. [PDF]

Adv Healthc Mater
Mukherjee A, Ferrari F, Romero DG, Squillante I, Schoenmaker J, Hemmatpour H, Terpstra A, Dijkstra P, Sayed JE, Koster LJA, Loi MA, Rudolf P, Portale G, Kottapalli AGP, Kamperman M, Bose RK.   +15 more
europepmc   +1 more source

A Tandem Chemical Vapor Deposition Platform for the Solvent-Free Synthesis of Polypeptide Architectures. [PDF]

Chemistry
Kratzer D, Plank M, Koenig M, Hafshejani TM, Lahann J.   +4 more
europepmc   +1 more source

Microstructures of microcrystalline silicon thin films prepared by hot wire chemical vapor deposition

, 2000
Undoped hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared at low temperature by hot wire chemical vapor deposition (HWCVD). Microstructures of the mu c-Si:H films with different H-2/SiH4 ratios and deposition pressures have been ...
Zhu M, Guo X, Chen G, He M, Han H, Zhu M,Univ Sci & Technol China,Grad Sch,POB 3908,Beijing 100039,Peoples R China., Sun K   +6 more
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