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Chemical vapor deposition of cobalt silicide
Applied Physics Letters, 1988We have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co2(CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2H6 as the Si source. The Co:Si ratio of the films is controlled by changing the deposition temperature, and CoSi2 stoichiometry is obtained at 300 °C using SiH4 or at 225 °C when Si2H6 is the Si precursor ...
Gary A. West, Karl W. Beeson
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1989
Chemical vapor deposition (CVD) is one of the most important methods of film formation used in the fabrication of very large scale integrated (VLSI) silicon circuits, as well as of microelectronic solid state devices in general. In this process, chemicals in the gas or vapor phase are reacted at the surface of a substrate where they form a solid ...
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Chemical vapor deposition (CVD) is one of the most important methods of film formation used in the fabrication of very large scale integrated (VLSI) silicon circuits, as well as of microelectronic solid state devices in general. In this process, chemicals in the gas or vapor phase are reacted at the surface of a substrate where they form a solid ...
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Diffusion mechanisms in chemical vapor-deposited iridium coated on chemical vapor-deposited rhenium
Metallurgical Transactions A, 1992Materials used for radiation-cooled rocket thrusters must be capable of surviving under extreme conditions of high temperatures and oxidizing environments. While combustion efficiency is maximized at high temperature, many refractory metals are unsuitable for thruster service due to rapid materials loss caused by volatile oxides. The Aerojet Propulsion
J. C. Hamilton +5 more
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Kinetics of Chemical Vapor Deposition
Journal of The Electrochemical Society, 1980A generalized mass transport model is developed for predicting the rate ofdeposition in chemical vapor deposition (CVD) systems. This combines thegeneralized method of obtaining equilibrium composition, with elemental fluxbalance expressions. This procedure avoids the usual problems encountered incalculating the rates in multicomponent systems, like ...
Subrahmanyam, J, Lahiri, AK, Abraham, KP
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Carriers by chemical vapor deposition
SPIE Proceedings, 1990Printed materials are affecting people's lives in a variety of ways and to a constantly increasing extent, both in the private and in the business spheres. In particular, the predicted reduction of printed materials resulting from electronic data processing - the so-called "paperless electronic office" - has not occured, indeed quite the reverse.
Norbert Mronga, J. Adel, Erwin Czech
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Chemical Vapor Deposition of Tungsten Borides
Inorganic Materials: Applied ResearchChemical vapor deposition (CVD) allows to synthesis protective and functional coatings, based on various materials, such as: refractory metals, non-metallic and organic substances. This method has several key-features that distinguish chemical vapor deposition from other coating methods. In particular, the CVD process allows obtaining coatings based on
A. V. Poligenko +4 more
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Chemical vapor deposition of graphene
2015In this thesis, I have shown that the quality of synthetic graphene can be as high as mechanically exfoliated graphene if we can get rid of the wrinkles. Any defects, impurities and grain boundaries will induce scattering, preventing ballistic transport. The experiment described in chapter 4 was the first to demonstrate ballistic transport in synthetic
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