Results 261 to 270 of about 151,235 (305)
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A routing clean-up methodology for improvement of defect and lithography related yield

Proceedings of SPIE, 2008
Particle induced defects are still one of the major sources of yield loss in semiconductor manufacturing. In addition, optical distortion of shapes cannot be ignored in modern technologies and requires increasing design effort in order to avoid yield loss and minimize manufacturing costs.
Reinhard März
exaly   +2 more sources

Optimization of wet clean and its impact on sub-50 nm pitch BEOL yield

2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016
In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple pattering (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. This scenario has imposed increased demands on many of the semiconductor processes involved in the fabrication of integrated circuits. One such
Christian Witt
exaly   +2 more sources

Clean Wool Yield Variation among Regions of Rambouillet Fleeces

Journal of Animal Science, 1943
Clair E Terrill, Terrill Clair E
exaly   +2 more sources

Reduction of photodesorption yield by oxygen discharge cleaning

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994
The effect of a surface cleaning using oxygen Penning discharge on the photodesorption by synchrotron radiation was measured for specially extruded 99.99% aluminum chambers. Oxygen plasma produced through a high current Penning discharge removes surface contamination without giving any damage on a surface of a vacuum chamber.
N. Ota   +4 more
openaire   +1 more source

Yield Monitor Data Cleaning is Essential for Accurate Corn Grain and Silage Yield Determination

Agronomy Journal, 2019
Core Ideas Corn silage and grain yield monitors collect yield data of relevance to farmers. Evaluation of quality of yield monitor data is essential, especially for silage. A data cleaning protocol, consistent across fields, farms, and years, is needed. Semi‐automation is needed for quick and consistent processing of whole‐farm data.
T.P. Kharel   +6 more
openaire   +1 more source

Wet cleaning process for high-yield via-last TSV formation

2016 IEEE International 3D Systems Integration Conference (3DIC), 2016
The backside via-last through silicon via (TSV) process is a simple and cost-effective approach for three-dimensional integration. However, it has two problems: (1) the notching near the bottom corners of TSVs and (2) the reaction product generated by the etchback step.
Naoya Watanabe   +6 more
openaire   +1 more source

Yield improvement in 2x node technology by introducing backside cleaning

2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2015
Advanced technology nodes require low defects counts at every processing step. Wafer cleaning of the backside is a neglected area. During HVM (high volume manufacturing) for 2x nm nodes we found that cleaning the backside (BS) of the wafer have dramatic improvements in defectivity reduction and yield increase.
Niti Garg   +3 more
openaire   +1 more source

Reducing device yield fallout at wafer level test with electrohydrodynamic (EHD) cleaning

Proceedings International Test Conference 2000 (IEEE Cat. No.00CH37159), 2002
Unstable contact resistance (C/sub RES/) during wafer test can significantly affect device yield, the need for reprobe, and equipment uptime. Abrasive cleaning during off-line probe card repair and maintenance is effective for reducing C/sub RES/ and removing surface contaminants from probe tips. This type of cleaning, however, shortens probe card life
Jerry J. Broz   +2 more
openaire   +1 more source

Neutralization of slow multicharged ions at a clean gold surface: Total electron yields

Physical Review A, 1993
Total slow-electron (${\mathit{E}}_{\mathit{e}}$\ensuremath{\le}60 eV) yields as derived from measured electron-emission statistics are presented for impact of various slow (${\mathit{v}}_{\mathit{p}}$\ensuremath{\le}${10}^{5}$ m/s) multicharged ions (${\mathrm{N}}^{5+}$,${\mathrm{N}}^{6+}$,${\mathrm{Ne}}^{5+}$--${\mathrm{Ne}}^{10+}$, ${\mathrm{Ar}}^{5+
, Kurz   +4 more
openaire   +2 more sources

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