A routing clean-up methodology for improvement of defect and lithography related yield
Proceedings of SPIE, 2008Particle induced defects are still one of the major sources of yield loss in semiconductor manufacturing. In addition, optical distortion of shapes cannot be ignored in modern technologies and requires increasing design effort in order to avoid yield loss and minimize manufacturing costs.
Reinhard März
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Optimization of wet clean and its impact on sub-50 nm pitch BEOL yield
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2016In advanced technology nodes, the BEOL requires advanced patterning techniques such as triple pattering (LELELE) and side wall image transfer techniques to form metal and via structures with pitches below 50nm. This scenario has imposed increased demands on many of the semiconductor processes involved in the fabrication of integrated circuits. One such
Christian Witt
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Clean Wool Yield Variation among Regions of Rambouillet Fleeces
Journal of Animal Science, 1943Clair E Terrill, Terrill Clair E
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Reduction of photodesorption yield by oxygen discharge cleaning
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1994The effect of a surface cleaning using oxygen Penning discharge on the photodesorption by synchrotron radiation was measured for specially extruded 99.99% aluminum chambers. Oxygen plasma produced through a high current Penning discharge removes surface contamination without giving any damage on a surface of a vacuum chamber.
N. Ota +4 more
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Yield Monitor Data Cleaning is Essential for Accurate Corn Grain and Silage Yield Determination
Agronomy Journal, 2019Core Ideas Corn silage and grain yield monitors collect yield data of relevance to farmers. Evaluation of quality of yield monitor data is essential, especially for silage. A data cleaning protocol, consistent across fields, farms, and years, is needed. Semi‐automation is needed for quick and consistent processing of whole‐farm data.
T.P. Kharel +6 more
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Wet cleaning process for high-yield via-last TSV formation
2016 IEEE International 3D Systems Integration Conference (3DIC), 2016The backside via-last through silicon via (TSV) process is a simple and cost-effective approach for three-dimensional integration. However, it has two problems: (1) the notching near the bottom corners of TSVs and (2) the reaction product generated by the etchback step.
Naoya Watanabe +6 more
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An integrated Energy-Yield-Cost model to evaluate clean energy solutions for vertical farms
Computers and Electronics in AgricultureRamin Roshandel
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Yield improvement in 2x node technology by introducing backside cleaning
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2015Advanced technology nodes require low defects counts at every processing step. Wafer cleaning of the backside is a neglected area. During HVM (high volume manufacturing) for 2x nm nodes we found that cleaning the backside (BS) of the wafer have dramatic improvements in defectivity reduction and yield increase.
Niti Garg +3 more
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Reducing device yield fallout at wafer level test with electrohydrodynamic (EHD) cleaning
Proceedings International Test Conference 2000 (IEEE Cat. No.00CH37159), 2002Unstable contact resistance (C/sub RES/) during wafer test can significantly affect device yield, the need for reprobe, and equipment uptime. Abrasive cleaning during off-line probe card repair and maintenance is effective for reducing C/sub RES/ and removing surface contaminants from probe tips. This type of cleaning, however, shortens probe card life
Jerry J. Broz +2 more
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Neutralization of slow multicharged ions at a clean gold surface: Total electron yields
Physical Review A, 1993Total slow-electron (${\mathit{E}}_{\mathit{e}}$\ensuremath{\le}60 eV) yields as derived from measured electron-emission statistics are presented for impact of various slow (${\mathit{v}}_{\mathit{p}}$\ensuremath{\le}${10}^{5}$ m/s) multicharged ions (${\mathrm{N}}^{5+}$,${\mathrm{N}}^{6+}$,${\mathrm{Ne}}^{5+}$--${\mathrm{Ne}}^{10+}$, ${\mathrm{Ar}}^{5+
, Kurz +4 more
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