Results 171 to 180 of about 9,107 (304)

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

Discovery of the most compact 3+1-type quadruple star system TIC 120362137. [PDF]

open access: yesNat Commun
Borkovits T   +20 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim   +6 more
wiley   +1 more source

Irrotational binary neutron stars in quasiequilibrium

open access: yes, 1999
We report on numerical results from an independent formalism to describe the quasiequilibrium structure of nonsynchronous binary neutron stars in general relativity.
P Marronetti, G J Mathews, J R Wilson
core  

Texoskeletons: Developing the Fundamental Technologies for Creating Intelligent Soft Robotic Clothing With Integrated 1D Sensors and Actuators

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Traditional wearable exoskeletons rely on rigid structures, which limit comfort, flexibility, and everyday usability. This work introduces the fundamental technologies to create the first soft, lightweight, intelligent textile‐based exoskeletons (Texoskeletons) built using 1D sensors and actuators.
Amy Lukomiak   +19 more
wiley   +1 more source

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