Results 131 to 140 of about 418,483 (315)

Ferroelectric Dynamic‐Field‐Driven Nucleation and Growth Model for Predictive Materials‐To‐Circuit Co‐Design

Advanced Materials, EarlyView.
This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang, Soohyeon Kim, Tony Chiang, Megan K. Lenox, Ian Mercer, John J. Plombon, Jon‐Paul Maria, Jon F. Ihlefeld, Wenhao Sun, Wei Lu, John T. Heron   +10 more
wiley   +1 more source

Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]

, 2012
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien, Goiffon, Vincent, Roy, François, Carrere, Jean-Pierre, Magnan, Pierre, Allegret, Stephane   +5 more
core   +1 more source

Soft, Degradable, and Magnetic Microcarriers for Encapsulation and Guided Transport of Drugs and 3D Spheroids

Advanced Materials, EarlyView.
This work presents soft, degradable hydrogel microcarriers that combine magnetic responsiveness with the ability to host multiple therapeutic and cellular components. Produced by droplet microfluidics, the carriers maintain structural integrity during manipulation, permit controlled breakdown under physiological conditions, and enable guided motion for
Xuan Peng, Lulu Song, Daryna Mruga, Veronika Bakhmat, Sergei Dzyadevych, Lin Guo, Shahrukh Shakeel, Rico Illing, Olha Bezsmertna, Xiaotao Wang, Nicholas R. Posselli, Sarthak Misra, Sandra Hauser, Jens Pietzsch, Klaus Kopka, Denys Makarov, Željko Janićijević, Xinne Zhao, Larysa Baraban   +18 more
wiley   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent, Gaillardin, Marc, Virmontois, Cédric, Magnan, Pierre, Martin-Gonthier, Philippe   +4 more
core  

Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation

Advanced Materials Interfaces, EarlyView.
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales, Aaron Reupert, Kevin Lubig, Frank A. Müller, Berit Marx‐Glowna, Ralf Röhlsberger, Till Weickhardt, Giancarlo Soavi, Martin Hafermann, Elke Wendler, Carsten Ronning   +10 more
wiley   +1 more source

Hierarchical Structure and Fabrication of Functionally Graded Biointerfaces in the Mussel Byssus

Advanced Materials Interfaces, EarlyView.
The byssus is a fibrous protein‐based holdfast consisting of mechanically distinct interfaces, which mussels use to anchor their soft living tissue to hard seashore surfaces. Here, multiscale methodologies were used to elucidate the compositional and structural features underlying these functionally graded interfaces and how they are fabricated through
Lucia Youssef, Jenaes Sivasundarampillai, Sydney Mikulin, Franziska Jehle, Matthew J. Harrington   +4 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Design of 50nm Vertical MOSFET Incorporating a Dielectric Pocket

, 2004
A new architecture for a vertical MOS transistor is proposed that incorporates a so-called dielectric pocket (DP) for suppression of short channel effects and bulk punch-through.
Donaghy, D, Ashburn, P, de Groot, C H, Hall, S, Kunz, V D   +4 more
core  

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

Advanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng, Cheng‐Feng Liu, Ruei‐Jhang Wang, Yu Cheng, Lung‐Yi Hsu, Yonder Berencén, Shengqiang Zhou, Hanh Thi‐Thu Tran, Guo‐En Chang   +8 more
wiley   +1 more source

Open‐source floating‐gate cell for analogue synapses

Electronics Letters
The floating‐gate transistor is commonly employed as a non‐volatile memory device, leveraging a floating node at its gate to store electrical charge over extended periods.
Matthew Chen, Charana Sonnadara, Sahil Shah   +2 more
doaj   +1 more source