Results 161 to 170 of about 537,942 (300)
Twin-Lever Multifunctional Meta-Optics With High Longitudinal Tolerance. [PDF]
We introduce a single‐layer, CMOS‐compatible metasurface that allows for polarization‐programmable, achromatic broadband dual‐mode imaging with high longitudinal tolerance. The twin‐lever design combines bright‐field focusing and vortex‐based edge‐enhanced imaging while managing axial intensity distribution from 488 to 633 nm.
Javed I +10 more
europepmc +2 more sources
By leveraging strong antiferromagnetic coupling, radiation‐tolerant synthetic antiferromagnetic synaptic devices are developed. Their intrinsic nonlinearity emulates neuronal activation, while linear and symmetric conductance modulation mimics synaptic plasticity.
Mingxu Song +5 more
wiley +1 more source
A Programmable Readout Pixel Image Sensor. [PDF]
Lazzaro JP, Venkatesan KR, Fossum ER.
europepmc +1 more source
A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu +6 more
wiley +1 more source
A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]
Tsiamis A +2 more
europepmc +1 more source
Integration of Reconfigurable p‐Bit and 1R Crossbar Array for Memristive Probabilistic Computing
A memristive probabilistic computing system is demonstrated by integrating stochastic p‐bits based on volatile memristors with a 1R crossbar array encoding interaction weights. The system performs weighted‐sum operations across the array and updates p‐bits iteratively.
Keunho Soh +7 more
wiley +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
Resistive switching memristors: structures, materials, fabrication techniques, and process challenges for VLSI integration. [PDF]
Singla R, Pant D, Nautiyal P, Painuly A.
europepmc +1 more source
NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine
A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee +10 more
wiley +1 more source
An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS [PDF]
Richardson, Justin A. +3 more
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