Results 181 to 190 of about 644,668 (339)

Ultra-low-cost, high-dynamic-range, additively manufactured CMOS spectrometers with UV, visible, and NIR sensing functionality [PDF]

BIO Web of Conferences
Kondo Hironori
doaj   +1 more source

Conception de transistors MOS haute tension en technologie CMOS 0,18 µm sur substrat "silicium sur isolant" (SOI) pour les nouvelles générations de circuits intégrés de puissance [PDF]

, 2010
G. Toulon
openalex  

Advancing the Frontiers of HfO2‐Based Ferroelectric Memories: Innovative Concepts from Materials to Applications

Advanced Materials, EarlyView.
HfO2‐based ferroelectric materials are promising for next‐generation memory technologies by providing outstanding performance aligning with data‐centric computing needs. This review details recent advancements in materials, devices, and integration for HfO2‐based memories, with the goal of identifying both the technological opportunities and remaining ...
Zuopu Zhou, Lingqi Li, Yang Feng, Xiaolin Wang, Zijie Zheng, Leming Jiao, Haofei Zheng, Yufei Shi, Kah‐Wee Ang, Xiao Gong   +9 more
wiley   +1 more source

A CMOS Voltage Reference with PTAT Current Using DIBL Compensation for Low Line Sensitivity. [PDF]

Sensors (Basel)
Jung M, Ji Y.
europepmc   +1 more source

Water Permeates and Plasticizes Amorphous Carbon Dots: Unraveling the Inner Accessibility of the Nanoparticles by Glass Transition Studies

Advanced Materials, EarlyView.
The water permeability of amorphous carbon dots (CDs) is demonstrated by investigating their plasticization. Novel polyamide‐based and amorphous nanoparticles are synthesized by controlling their inner packing density. Water plasticization is evidenced by the decrease of the CDs glass transition temperature with increasing the hydration degree.
Elisa Sturabotti, Valerio Di Lisio, Lucia Cardo, Alessandro Camilli, Estela Moretón Alfonsín, Daniele Cangialosi, Amaia Iturrospe Ibarra, Arantxa Arbe, Maurizio Prato   +8 more
wiley   +1 more source

Sulfur redox mediator for low-temperature flexible amorphous oxide CMOS electronics. [PDF]

Sci Adv
Wang M, Zou T, Reo Y, Kim YS, Kim MG, Choi M, Park Y, Yang K, Kang Y, Zhu H, Noh YY, Liu A.   +11 more
europepmc   +1 more source

Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating [PDF]

, 2019
Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue   +6 more
openalex   +1 more source

Transistor‐Level Activation Functions via Two‐Gate Designs: From Analog Sigmoid and Gaussian Control to Real‐Time Hardware Demonstrations

Advanced Materials, EarlyView.
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Junhyung Cho, Youngmin Han, Won Woo Lee, Youngwoo Yoo, Kannan Udaya Mohanan, Chang‐Hyun Kim, Junhwan Choi, Young‐Joon Kim, Wonjun Shin, Hocheon Yoo   +9 more
wiley   +1 more source

Tapered Cladding Design for Monolithic Waveguide-Photodetector Coupling in Si-Based Integrated Photonics. [PDF]

Nanomaterials (Basel)
Gonzalez-Fernandez AA, Vazquez-Hernandez JA, Aguilar-Valdez F, Moffat N.   +3 more
europepmc   +1 more source

On-Chip Phase Measurement Design Study in 65nm CMOS Technology

, 2015
Daniyal Haider
openalex   +1 more source