Results 191 to 200 of about 385,801 (356)

Research Progress on Atmospheric Turbulence Perception and Correction Based on Adaptive Optics and Deep Learning

open access: yesAdvanced Photonics Research, EarlyView.
This work presents a systematic review of atmospheric turbulence fundamentals, including theoretical formulations and adaptive optics‐based mitigation strategies. This includes an in‐depth examination of the devices, theories, and methodologies associated with traditional correction approaches.
Qinghui Liu   +5 more
wiley   +1 more source

Relationship between IBICC imaging and SEU in CMOS ICs [PDF]

open access: green, 1993
F.W. Sexton   +6 more
openalex   +1 more source

940 nm Micro‐Light‐Emitting Diode Fabricated on Industry‐Compatible 300 mm Si (100) Substrate by Metal–Organic Chemical Vapor Deposition

open access: yesAdvanced Photonics Research, EarlyView.
The fabrication of 940 micro‐light‐emitting diodes on both 300 mm Si and Ge/Si wafers has been demonstrated using direct metal–organic chemical vapor deposition epitaxy. These promising results show the potential for monolithic integration of III‐As onto complementary metal‐oxide‐semiconductor (CMOS)‐compatible silicon platforms. This achievement opens
Hadi Hijazi   +12 more
wiley   +1 more source

Optical Wireless Communications with Metasurfaces: Current Status and Potential for Intelligent Communications

open access: yesAdvanced Photonics Research, EarlyView.
Optical wireless communications (OWCs) provide a promising alternative to spectrum‐congested microwave wireless communications. Recently, the use of metasurfaces with sub‐wavelength features for dynamic beam steering, beam manipulation, and spatial or optical‐angular‐momentum mode generation, conversion, and multiplexing in OWCs is proposed and ...
Ke Wang   +7 more
wiley   +1 more source

High‐Throughput Single‐Nanowire Optoelectronic Characterization Using Microfluidic Technology

open access: yesAdvanced Photonics Research, EarlyView.
An ultrathin microfluidic platform enables high‐throughput, in‐line single particle characterization of semiconductor nanowires. Using correlative spectroscopy and imaging, analysis at 240 nanowires per minute, uncovering previously hidden details about intra‐wire disorder and inter‐wire inhomogeneity, is achieved.
Tharaka MDS Weeraddana   +5 more
wiley   +1 more source

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