Results 21 to 30 of about 43,186 (267)
HeliyonIn this work, we introduce an enhanced Finite Volume Method (FVM) designed for the quasi-electrostatic analysis of microfluidic devices in the frequency domain.
Milan Rother +2 more
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A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper presents a D-band phase shifter fabricated using 65-nm CMOS technology that provides continuous full 360° phase shift. To achieve moderate insertion loss with low DC power, a hybrid-type topology is adopted by combining a 180° reflection-type ...
Eunjung Kim, Sanggeun Jeon
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Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?
IEEE AccessWith automotive radar and 5G/6G communications, mass-market applications for millimeter-wave circuits in silicon technologies have been identified or established in recent years.
Yannick Wenger +2 more
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FULLY OPTIMIZED ULTRA WIDEBAND RF RECEIVER FRONT END
Jordanian Journal of Computers and Information Technology, 2022 This paper proposes a novel and fully optimized Ultra-wideband rf receiver front end in UMC 180nm 1P6M CMOS process. The heterodyne architecture used in this work does not use the on-chip image reject mixer.
Rajesh Khatri, D. K. Mishra
doaj +1 more source
Design of low-power D-flip-flop based on multithreshold technique(基于多阈值技术的低功耗D触发器设计)
Zhejiang Daxue xuebao. Lixue ban, 2005 目前CMOS电路中，漏电流功耗已经成为不可忽视的部分.降低电路漏电流功耗的一种有效方法是采用多阈值电路技术.根据多阈值电路设计原理，电路的关键路径采用低阈值晶体管，以保证电路的性能；非关键路径采用高阈值晶体管，以降低电路的漏电流功耗.对于触发器来说，其对时钟的响应部分是一个关键路径，而对信号的响应部分是非关键路径.本文据此设计了一种新型低功耗D触发器——多阈值与非门保持型D触发器.该电路结构简单，降低了电路漏电流功耗，并且当输入保持不变时，时钟信号不作用于内部结点，使内部结点电压保持不变 ...
ZHANGHui-xi(张慧熙) +2 more
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Modeling and the analysis of control logic for a digital PWM controller based on a nano electronic single electron transistor [PDF]
Serbian Journal of Electrical Engineering, 2008 This paper describes the modelling and the analysis of control logic for a Nano-Device- based PWM controller. A comprehensive simple SPICE schematic model for Single Electron transistor has been proposed. The operation of basic Single Electron Transistor
Rathnakannan Kailasam, Ranjan Vanaja
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A novel approach for designing of variability aware low-power logic gates
ETRI Journal, 2022 Metal-oxide-semiconductor field-effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits.
Vijay Kumar Sharma
doaj +1 more source
Optics Express, 2016 Proposed and experimentally demonstrated is the CAOS-CMOS camera design that combines the coded access optical sensor (CAOS) imager platform with the CMOS multi-pixel optical sensor. The unique CAOS-CMOS camera engages the classic CMOS sensor light staring mode with the time-frequency-space agile pixel CAOS imager mode within one programmable optical ...
Riza, Nabeel A. +2 more
openaire +3 more sources
Nuclear pore links Fob1‐dependent rDNA damage relocation to lifespan control
FEBS Open Bio, EarlyView.Damaged rDNA accumulates at a specific perinuclear interface that couples nucleolar escape with nuclear envelope association. Nuclear pores at this site help inhibit Fob1‐induced rDNA instability. This spatial organization of damage handling supports a functional link between nuclear architecture, rDNA stability, and replicative lifespan in yeast.
Yamato Okada +5 more
wiley +1 more source
Design of an integrated circuit with buried double junction photodiodes for optical immunoassays
Revista Elektrón, 2020 Optical immunoassays require measurement systems capable of distinguishing the light from the laser source, used to illuminate the assay, from the light generated by the particles contained within the assay itself (fluorescence).
Juan Pablo Goyret +1 more
doaj +1 more source