Results 31 to 40 of about 43,186 (267)
Whether from a device physics, fabrication technology, or process economics point of view, the practice of downsizing silicon-based CMOS devices will soon end [...]
openaire +3 more sources
This study uncovers the unexplored role of intermolecular interactions in multiphoton absorption in coordination polymers. By analyzing [Zn2tpda(DMA)2(DMF)0.3], it shows how the electronic coupling of the chromophores and confinement in the MOF enhance two‐and three‐photon absorption.
Simon Nicolas Deger +11 more
wiley +1 more source
Detecting Out-of-Distribution (OOD) gestures is vital for reliable radar-based gesture-recognition systems. Traditional autoencoders often fall short in OOD detection because they prioritize minimizing reconstruction error over forming distinct clusters ...
Muhammad Ghufran Janjua +4 more
doaj +1 more source
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone +11 more
wiley +1 more source
Microwave Imaging for Breast Cancer Detection - A Comparison Between VNA and FMCW Radar
This paper presents the comparison between microwave imaging for breast cancer detection using a vector network analyzer (VNA) and a frequency-modulated continuous wave (FMCW) radar system.
Martin Maier +6 more
doaj +1 more source
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
Recent progress of oxide-TFT-based inverter technology
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including
Kenji Nomura
doaj +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Three‐dimensional Antimony Sulfide Based Flat Optics
This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang +18 more
wiley +1 more source
A Folded Cascode CMOS Low Noise Amplifier with Transformer Feedback [PDF]
This study proposes a folded cascode CMOS low noise amplifier (LNA) with transformer feedback, implemented using a 0.13-μm CMOS process for wireless local area network front-end module applications.
Dongmyeong Kim +3 more
doaj +1 more source

