Results 51 to 60 of about 53,559 (283)

Transconductance/drain current based sensitivity analysis for analog CMOS integrated circuits

open access: yes2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS), 2013
Recent studies have shown that transistor variability and ageing phenomena are responsible for variation of transconductance (gm) and drain current (ID) in MOSFETs. It is therefore important to perform sensitivity analysis at the earliest design stage in order to minimize effects of ageing.
Ou, Jack, Maris Ferreira, Pietro
openaire   +2 more sources

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Excel Methods to Design and Validate in Microelectronics (Complementary Metal–Oxide–Semiconductor, CMOS) for Biomedical Instrumentation Application

open access: yesSensors, 2021
CMOS microelectronics design has evolved tremendously during the last two decades. The evolution of CMOS devices to short channel designs where the feature size is below 1000 nm brings a great deal of uncertainty in the way the microelectronics design ...
Graciano Dieck-Assad   +2 more
doaj   +1 more source

Mimicking Silent Synapse Recruitment: A SiOx/Cu‐Pancake Memristive Device For Analog Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Electroforming‐free TiN/SiOx/Cu/SiOx/TiN memristive devices exploit pancake‐like Cu nanoparticles embedded in a SiOx double layer to create a heterogeneous Schottky‐barrier landscape. Under bias, oxygen‐vacancy redistribution progressively lowers local barriers and recruits initially inactive Cu‐PC pathways into a parallel conduction ensemble, enabling
Rouven Lamprecht   +10 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

A Low Power Analog Integrated Fractional Order Type-2 Fuzzy PID Controller

open access: yesFractal and Fractional
This paper introduces an analog integrated fractional order type-2 fuzzy PID control system. Current approaches frequently depend on energy-intensive embedded digital systems, consuming substantial energy levels ranging from a few μW to mW.
Vassilis Alimisis   +5 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

open access: yesAdvanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee   +10 more
wiley   +1 more source

Bandwidth Extension of High Compliance Current Mirror by Using Compensation Methods

open access: yesActive and Passive Electronic Components, 2014
Due to the huge demand of high-speed analog integrated circuits, it is essential to develop a wideband low input impedance current mirror that can be operated at low power supply. In this paper, a novel wideband low voltage high compliance current mirror
Maneesha Gupta   +2 more
doaj   +1 more source

Polarization‐Dependent Synaptic‐Like Electro‐Optical Response in Ferroelectric Nematic Liquid Crystals

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley   +1 more source

Bioinspired Adaptive Sensors: A Review on Current Developments in Theory and Application

open access: yesAdvanced Materials, EarlyView.
This review comprehensively summarizes the recent progress in the design and fabrication of sensory‐adaptation‐inspired devices and highlights their valuable applications in electronic skin, wearable electronics, and machine vision. The existing challenges and future directions are addressed in aspects such as device performance optimization ...
Guodong Gong   +12 more
wiley   +1 more source

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