Results 41 to 50 of about 53,559 (283)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

A High-Temperature, Low-Noise Readout ASIC for MEMS-Based Accelerometers

Sensors, 2019
This paper presents the development and measurement results of a complementary metal oxide semiconductor (CMOS) readout application-specific integrated circuit (ASIC) for bulk-silicon microelectromechanical system (MEMS) accelerometers. The proposed ASIC
Min Qi, An-qiang Guo, Dong-hai Qiao
doaj   +1 more source

Low-noise delta-sigma analog front end with capacitor swapping technique for capacitive microsensors

Measurement + Control, 2022
In this paper, low-noise incremental delta–sigma analog front end (AFE) integrated circuit (IC) for capacitive microsensors is presented. A conventional capacitance-to-digital converter (CDC) mainly uses a multi-stage capacitive sensing amplified stage ...
Kyeongsik Nam, Hyungseup Kim, Gyuri Choi, Mookyoung Yoo, Hyoungho Ko   +4 more
doaj   +1 more source

Analog Vector-Matrix Multiplier Based on Programmable Current Mirrors for Neural Network Integrated Circuits

IEEE Access, 2020
We propose a CMOS Analog Vector-Matrix Multiplier for Deep Neural Networks, implemented in a standard single-poly 180 nm CMOS technology. The learning weights are stored in analog floating-gate memory cells embedded in current mirrors implementing the ...
M. Paliy, S. Strangio, Piero Ruiu, T. Rizzo, G. Iannaccone   +4 more
semanticscholar   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Micromachines
As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is considered to be the most significant transistor technology beyond Moore’s era ...
Zhifeng Chen, Jiming Chen, Wenli Liao, Yuan Zhao, Jianhua Jiang, Chengying Chen   +5 more
doaj   +1 more source

A 79 dBΩ 1.2 GHz Low-Noise Single-Ended CMOS Transimpedance Amplifier for High-Performance OTDR Applications

Electrical, Control and Communication Engineering, 2019
The work reports on the design and performance of a low-noise low-cost CMOS transimpedance amplifier (TIA). The proposed circuit shall be employed in optical time-domain reflectometers and is implemented using an affordable 0.18 µm 1.8 V CMOS process ...
Romanova Agata, Barzdenas Vaidotas
doaj   +1 more source

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

Frontiers in Neuroscience, 2020
Here we provide a perspective concept of neurohybrid memristive chip based on the combination of living neural networks cultivated in microfluidic/microelectrode system, metal-oxide memristive devices or arrays integrated with mixed-signal CMOS layer to ...
Alexey Mikhaylov, Alexey Pimashkin, Yana Pigareva, Svetlana Gerasimova, Evgeny Gryaznov, Sergey Shchanikov, Anton Zuev, Max Talanov, Igor Lavrov, Igor Lavrov, Vyacheslav Demin, Victor Erokhin, Victor Erokhin, Victor Erokhin, Sergey Lobov, Sergey Lobov, Irina Mukhina, Irina Mukhina, Victor Kazantsev, Victor Kazantsev, Huaqiang Wu, Bernardo Spagnolo, Bernardo Spagnolo, Bernardo Spagnolo   +23 more
doaj   +1 more source

A Novel Standard-Cell-Based Implementation of the Digital OTA Suitable for Automatic Place and Route

Journal of Low Power Electronics and Applications, 2021
This paper presents a novel implementation of a digital-based Operational Transconductance Amplifier (OTA) which has been recently introduced in the technical literature as a fully digital alternative to the conventional differential pair to implement ...
Gaetano Palumbo, Giuseppe Scotti
doaj   +1 more source