Results 41 to 50 of about 3,169,862 (288)

Considerations for Neuromorphic Supercomputing in Semiconducting and Superconducting Optoelectronic Hardware

Frontiers in Neuroscience, 2021
Any large-scale spiking neuromorphic system striving for complexity at the level of the human brain and beyond will need to be co-optimized for communication and computation.
Bryce A. Primavera, Bryce A. Primavera, Jeffrey M. Shainline   +2 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Design of a process monitor and of peripheral circuits enabling the characterisation of CMOS 45nm Ultra Low Power and Litho Friendly optimised standard cells [PDF]

, 2008
L’evoluzione della tecnologia CMOS è caratterizzata dallo scaling delle dimensioni dei dispositivi e dalla riduzione del consumo di potenza. Dal momento che le difficoltà di realizzazione aumentano al diminuire delle dimensioni, nei nodi tecnologici più ...
TAGLIABUE, CLAUDIO
core   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Micromachines
As the traditional silicon-based CMOS technology advances into the nanoscale stage, approaching its physical limits, the Carbon Nanotube Field-effect Transistor (CNTFET) is considered to be the most significant transistor technology beyond Moore’s era ...
Zhifeng Chen, Jiming Chen, Wenli Liao, Yuan Zhao, Jianhua Jiang, Chengying Chen   +5 more
doaj   +1 more source

A 79 dBΩ 1.2 GHz Low-Noise Single-Ended CMOS Transimpedance Amplifier for High-Performance OTDR Applications

Electrical, Control and Communication Engineering, 2019
The work reports on the design and performance of a low-noise low-cost CMOS transimpedance amplifier (TIA). The proposed circuit shall be employed in optical time-domain reflectometers and is implemented using an affordable 0.18 µm 1.8 V CMOS process ...
Romanova Agata, Barzdenas Vaidotas
doaj   +1 more source

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

Frontiers in Neuroscience, 2020
Here we provide a perspective concept of neurohybrid memristive chip based on the combination of living neural networks cultivated in microfluidic/microelectrode system, metal-oxide memristive devices or arrays integrated with mixed-signal CMOS layer to ...
Alexey Mikhaylov, Alexey Pimashkin, Yana Pigareva, Svetlana Gerasimova, Evgeny Gryaznov, Sergey Shchanikov, Anton Zuev, Max Talanov, Igor Lavrov, Igor Lavrov, Vyacheslav Demin, Victor Erokhin, Victor Erokhin, Victor Erokhin, Sergey Lobov, Sergey Lobov, Irina Mukhina, Irina Mukhina, Victor Kazantsev, Victor Kazantsev, Huaqiang Wu, Bernardo Spagnolo, Bernardo Spagnolo, Bernardo Spagnolo   +23 more
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Excel Methods to Design and Validate in Microelectronics (Complementary Metal–Oxide–Semiconductor, CMOS) for Biomedical Instrumentation Application

Sensors, 2021
CMOS microelectronics design has evolved tremendously during the last two decades. The evolution of CMOS devices to short channel designs where the feature size is below 1000 nm brings a great deal of uncertainty in the way the microelectronics design ...
Graciano Dieck-Assad, José Manuel Rodríguez-Delgado, Omar Israel González Peña   +2 more
doaj   +1 more source

Transconductance/drain current based sensitivity analysis for analog CMOS integrated circuits

2013 IEEE 11th International New Circuits and Systems Conference (NEWCAS), 2013
Recent studies have shown that transistor variability and ageing phenomena are responsible for variation of transconductance (gm) and drain current (ID) in MOSFETs. It is therefore important to perform sensitivity analysis at the earliest design stage in order to minimize effects of ageing.
Ou, Jack, Maris Ferreira, Pietro
openaire   +2 more sources