Results 91 to 100 of about 557 (199)

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

A full-featured 2D flash chip enabled by system integration. [PDF]

Nature
Liu C, Jiang Y, Shen B, Yuan S, Cao Z, Bi Z, Wang C, Xiang Y, Wang T, Wu H, Liu Z, Wang Y, Wang S, Zhou P.   +13 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

A ferroelectric-memristor memory for both training and inference. [PDF]

Nat Electron
Martemucci M, Rummens F, Malot Y, Hirtzlin T, Guille O, Martin S, Carabasse C, Vincent AF, Saïghi S, Grenouillet L, Querlioz D, Vianello E.   +11 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Si-doped CsSrI₃ perovskites as potential dielectrics in MIM capacitors: recent advances, limitations and prospects. [PDF]

RSC Adv
Itas YS, Khandaker MU, Haldhar R, Alrahili MR.   +3 more
europepmc   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

A Review of Embedded Artificial Intelligence Research (2023-2026): Technological Advancements, Representative Advances, and Future Prospects. [PDF]

Micromachines (Basel)
Zhang Z.
europepmc   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source

Spin-qubit control with a milli-kelvin CMOS chip. [PDF]

Nature
Bartee SK, Gilbert W, Zuo K, Das K, Tanttu T, Yang CH, Dumoulin Stuyck N, Pauka SJ, Su RY, Lim WH, Serrano S, Escott CC, Hudson FE, Itoh KM, Laucht A, Dzurak AS, Reilly DJ.   +16 more
europepmc   +1 more source