Results 111 to 120 of about 557 (199)

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

A Comparison of Cost-Effective Sensors for a Fluorescence-Based Detection System Used in Biodiagnostic Devices. [PDF]

Biosensors (Basel)
Vornweg R, Decool C, Hemmer M, Stollfuss B, Guenther T, Löffler AK, Kontermann RE, Zimmermann A.   +7 more
europepmc   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

A Review on Multi-Level Asymmetric Design for 2D Neuromorphic Devices. [PDF]

Nanomicro Lett
Sun Y, Gao Y, Wang Z, Cai Z, Liu Z, Xu J.   +5 more
europepmc   +1 more source

From Flexible to Conformable Pressure Sensors: Mechanisms, Materials, and Biomedical Applications

Advanced Electronic Materials, EarlyView.
This review highlights recent progress, challenges and future opportunities in pressure sensing for advanced biomedical applications. We summarize key transduction mechanisms and emerging material strategies, discuss representative wearable and implantable applications for continuous physiological monitoring and provide a focused perspective on barrier
Rishabh B. Mishra, Andrea Ottomaniello, Virgilio Mattoli   +2 more
wiley   +1 more source

Two-Dimensional Materials, the Ultimate Solution for Future Electronics and Very-Large-Scale Integrated Circuits. [PDF]

Nanomicro Lett
Qin L, Wang L.
europepmc   +1 more source

Low‐Field Giant Dielectric Tunability by Polaron‐Mediated Interfacial Polarization in Pulsed‐Laser‐Deposited‐Nanocrystalline/Amorphous Composite BaTiO3 Thin Films

Advanced Electronic Materials, EarlyView.
Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo, Taichi Murakami, Loick Pichon, Joël Leblanc‐Lavoie, Takashi Teranishi, Akira Kishimoto, Tomoaki Yamada, My Ali El Khakani   +7 more
wiley   +1 more source

Highly-integrable analogue reservoir circuits based on a simple cycle architecture. [PDF]

Sci Rep
Abe Y, Nakada K, Hagiwara N, Suzuki E, Suda K, Mochizuki SI, Terasaki Y, Sasaki T, Asai T.   +8 more
europepmc   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Phase-Change Memory for In-Memory Computing. [PDF]

Chem Rev
Syed GS, Le Gallo M, Sebastian A.
europepmc   +1 more source