Results 21 to 30 of about 541 (202)

Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments

The Journal of Engineering, 2019
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half-duplex transceiver (TRX) chip implemented in 65 nm CMOS technology.
Imran Aziz, Dragos Dancila, Dragos Dancila, Sebastian Dittmeier, Sebastian Dittmeier, Alexandre Siligaris, Cedric Dehos, Patrik Martin De Lurgio, Zelimir Djurcic, Gary Drake, Jose Luis Gonzalez Jimenez, Leif Gustaffson, Don-Won Kim, Elizabeth Locci, Ulrich Pfeiffer, Pedro Rodriquez Vazquez, Dieter Röhrich, Andre Schöning, Hans Kristian Soltveit, Kjetil Ullaland, Pierre Vincent, Shiming Yang, Richard Brenner   +22 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Accurate geometry scalable complementary metal oxide semiconductor modelling of low-power 90 nm amplifier circuits

The Journal of Engineering, 2014
This paper proposes a technique to accurately estimate radio frequency behaviour of low-power 90 nm amplifier circuits with geometry scalable discrete complementary metal oxide semiconductor (CMOS) modelling.
Apratim Roy, A.B.M.H. Rashid
doaj   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

A symmetric 8T2R NVSRAM with autosave function

Electronics Letters
This letter presented a symmetric 8T2R NVSRAM with autosave function. By efficiently multiplexing the node voltages, the control of the nonvolatile memristor and the isolation of the data node from the memristor are achieved, which ensures an ...
Bowen Su, Jueping Cai, Yuxin Zhang, Yiding Wang   +3 more
doaj   +1 more source

Biopotential acquisition unit for energy-efficient wearable health monitoring

IET Cyber-Physical Systems, 2018
In wearable health monitoring system, the energy consumption is dominated by the transmitter. These systems generally use proprietary acquisition platforms that are incompatible with each other which makes this even more challenging.
Wazir Singh, Sujay Deb
doaj   +1 more source

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

Advanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma, Ziyu Lv, Guohua Zhang, Zhongyue Xu, Yongbiao Zhai, Haiming Huang, Qiyan Zhang, Xiaojin Zhao, Yan Wang, Ye Zhou, Ziyu Xiong, Guanglong Ding, Wentao Xu, Su‐Ting Han   +13 more
wiley   +1 more source

Open‐source floating‐gate cell for analogue synapses

Electronics Letters
The floating‐gate transistor is commonly employed as a non‐volatile memory device, leveraging a floating node at its gate to store electrical charge over extended periods.
Matthew Chen, Charana Sonnadara, Sahil Shah   +2 more
doaj   +1 more source

23 µW 8.9-effective number of bit 1.1 MS/s successive approximation register analog-to-digital converter with an energy-efficient digital-to-analog converter switching scheme

The Journal of Engineering, 2014
This study presents a successive approximation register analog-to-digital converter with an energy-efficient switching scheme. A split-most significant bit capacitor array is used with a least significant bit-down switching scheme.
Lei Sun, Chi Tung Ko, Marco Ho, Wai Tung Ng, Wai Tung Ng, Ka Nang Leung, Chiu Sing Choy, Kong Pang Pun   +7 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source