Results 121 to 130 of about 12,532,430 (255)

Spectral Selective and Low‐Noise Thin‐Film Organic Photodetectors Enabled by Electric‐Field Engineering

Advanced Materials, EarlyView.
Molecular doping redistributes the internal electric field in organic photodetectors, providing a new degree of freedom to spatially control carrier transport and collection. Simulations and experiments reveal distinct transport pathways for injected and photogenerated carriers, enabling low dark current under reverse bias and wavelength‐selective ...
Jingwei Yi, Yi Yang, Vahid Mahdikhah, Yibo Shi, Jordan Shanahan, Apurva Gadikar, Yusen Pei, Xinyun Dong, Jacob P Mauthe, Reece Henry, Kenan Gundogdu, Brendan T. O'Connor, Aram Amassian, Harald Ade, Wei You, Franky So   +15 more
wiley   +1 more source

Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon

Advanced Materials, EarlyView.
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra, Tobias Schwaigert, Yingxin Zhu, Aiden Ross, Muhammad Aminul Haque Chowdhury, Shun‐Li Shang, Sameer Singh, Zhiyu Zhang, Zhe Wang, Brynn Brower, Saugata Sarker, Suchismita Sarker, Zi‐Kui Liu, Rama K. Vasudevan, Long‐Qing Chen, Yang Yang, Darrell G. Schlom, Venkatraman Gopalan   +17 more
wiley   +1 more source

Silicon Nanowire Phototransistor Arrays for CMOS Image Sensor Applications. [PDF]

Sensors (Basel), 2023
Jun H, Choi J, Hwang J.
europepmc   +1 more source

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

Advanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves, Yiru Zhu, Matin Salimi Irdmusa, Nadire Nayir, Thomas V. Mc Knight, Chen Chen, Ke Wang, Adri C. T. van Duin, Joan M. Redwing   +8 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

A CMOS Image Sensor Dark Current Compensation Using In-Pixel Temperature Sensors. [PDF]

Sensors (Basel), 2023
Abarca A, Theuwissen A.
europepmc   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

Advanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee, Taebin Lim, Seungho Lee, Sunaina Priyadarshi, Jin Jang   +4 more
wiley   +1 more source

Depth Quality Improvement with a 607 MHz Time-Compressive Computational Pseudo-dToF CMOS Image Sensor. [PDF]

Sensors (Basel), 2023
Pham AN, Ibrahim T, Yasutomi K, Kawahito S, Nagahara H, Kagawa K.   +5 more
europepmc   +1 more source

Toward Perception‐Native Electronic Skin: Bio‐Inspired In‐/Near‐Sensor and Neuromorphic Computing for Humanoid Robots

Advanced Materials Technologies, EarlyView.
Dense tactile streams from across the humanoid body converge on collide in a central wiring and data bottleneck. By relocating computation closer to and then into the skin itself, near‐ and in‐sensor architectures, together with neuromorphic computing, chart a path toward perception‐native electronic skin, in which the conversion of stimulus into ...
Mijin Kim, Chang‐Jae Beak, Jiyoung Park, Youngdo Jung, Sunjong Oh, Sin‐Hyung Lee, Bo‐Yeon Lee   +6 more
wiley   +1 more source