Results 51 to 60 of about 12,477 (256)
The Design of a Single-Bit CMOS Image Sensor for Iris Recognition Applications
This paper presents a single-bit CMOS image sensor (CIS) that uses a data processing technique with an edge detection block for simple iris segmentation. In order to recognize the iris image, the image sensor conventionally captures high-resolution image
Keunyeol Park, Minkyu Song, Soo Youn Kim
doaj +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Diseño y Construcción de una Plataforma Robótica para Control PTZ de un Sistema Electro-Óptico
En elpresente trabajo se ha desarrollado el control PTZ y la adquisición de imagendesde un sensor CMOS, para un sistema electro-óptico, el cual se prueba en unaplataforma robótica terrestre.
Patricio Burbano +6 more
doaj
Characterization of Quanta Image Sensor Pump-Gate Jots With Deep Sub-Electron Read Noise
Characterization of quanta image sensor pixels with deep sub-electron read noise is reported. Pixels with conversion gain of $423\mu \text{V}$ /e- and read noise as low as 0.22e- r.m.s. were measured.
Jiaju Ma +4 more
doaj +1 more source
新しく登場したCMOSイメージセンサを, すでに撮像素子として確固たる地位を確立しているCCDイメージセンサと比較することにより, その可能性を検討し, これからの技術課題を述べる.課題を解決できると, CCDセンサと同等またはそれ以上の性能を実現し, 大きな市場を形成すると予想できる.CMOSセンサの可能性としてシステムオンチップの現状についても触れる.
openaire +2 more sources
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee +10 more
wiley +1 more source
Imaging performance of a CaWO4/CMOS sensor
The aim of this study was to investigate the modulation transfer function (MTF) and the effective gain transfer function (eGTF) of a non-destruc¬¬tive testing (NDT)/industrial inspection complementary metal oxide semi¬conductor (CMOS) sensor in ...
Niki Martini +11 more
doaj +3 more sources
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley +1 more source

