Results 61 to 70 of about 16,912 (308)

CMOS Image Sensor.

The Journal of the Institute of Image Information and Television Engineers, 1998
新しく登場したCMOSイメージセンサを, すでに撮像素子として確固たる地位を確立しているCCDイメージセンサと比較することにより, その可能性を検討し, これからの技術課題を述べる.課題を解決できると, CCDセンサと同等またはそれ以上の性能を実現し, 大きな市場を形成すると予想できる.CMOSセンサの可能性としてシステムオンチップの現状についても触れる.
openaire   +2 more sources

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

A Readout Circuit Applied for an Ultrafast CMOS Image Sensor

Photonics
Microchannel plate gated framing camera is commonly used in inertial confinement fusion diagnostics. However, it is a vacuum electronic device with bulkiness and non-single-line-of-sight imaging. To reduce the size of the camera and achieve a single line
Houzhi Cai, Zhaoyang Xie, Zhiying Deng, Youlin Ma, Lijuan Xiang   +4 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent, Magali Estribeau, Estribeau, Magali, Virmontois, Cédric, Pinel, Philippe, Philippe Pinel, Pierre Magnan, Corbière, Franck, Cédric Virmontois, Vincent Goiffon, Cervantes, Paola, Paola Cervantes, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Combined image signal processing for CMOS image sensors [PDF]

Electronics Letters, 2005
An efficient image signal processing structure is proposed for CMOS image sensors to achieve low area and power consumption. In the proposed structure, the gamma correction block is moved to the front to merge several image signal processings into one block.
Kimo Kim, In-Cheol Park
openaire   +2 more sources

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]

, 2013
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice, Goiffon, Vincent, Estribeau, Magali, Cervantes, Paola, Magnan, Pierre   +4 more
core   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source