Results 81 to 90 of about 12,532,430 (255)

Dynamic range optimisation of CMOS image sensors dedicated to space applications [PDF]

open access: yes, 2007
Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain.
Huger, Nicolas   +5 more
core  

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin   +7 more
wiley   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

open access: yes, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent   +20 more
core   +1 more source

Programming Nanoscale Reaction Environments via Peptide Localization for Gold Nanoparticle Growth in Liposomal Nanoreactors

open access: yesAdvanced Functional Materials, EarlyView.
The liposome nanoreactor method enables uniform metal nanoparticle synthesis using the interior as a reaction environment. We demonstrate that peptide sequences and lipid compositions act as a functional molecular switch to control reaction environments in liposome nanoreactors.
Yuya Abe   +6 more
wiley   +1 more source

A 12-Bit High-Speed Column-Parallel Two-Step Single-Slope Analog-to-Digital Converter (ADC) for CMOS Image Sensors

open access: yesSensors, 2014
A 12-bit high-speed column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for CMOS image sensors is proposed. The proposed ADC employs a single ramp voltage and multiple reference voltages, and the conversion is divided into coarse
Tao Lyu   +3 more
doaj   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

open access: yesAdvanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan   +4 more
wiley   +1 more source

Adaptive Thresholding Scheme for Demodulation of Rolling-Shutter Images Obtained in CMOS Image Sensor Based Visible Light Communications

open access: yesIEEE Photonics Journal, 2018
Light-emitting-diode transmitter and complementary-metal–oxide–semicon-ductor (CMOS) image sensor receiver based visible light communication is a promising scheme for an optical wireless communication. During the demodulation of the rolling
Chi-Wai Chow   +3 more
doaj   +1 more source

Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures

open access: yesAdvanced Functional Materials, EarlyView.
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash   +6 more
wiley   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

open access: yes, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent   +4 more
core  

Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]

open access: yes, 2012
Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A.   +13 more
core   +1 more source

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