Results 161 to 170 of about 1,020 (173)
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First tests of CHERWELL, a Monolithic Active Pixel Sensor: A CMOS Image Sensor (CIS) using 180 nm technology

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
Abstract The Cherwell is a 4T CMOS sensor in 180 nm technology developed for the detection of charged particles. Here, the different test structures on the sensor will be described and first results from tests on the reference pixel variant are shown. The sensors were shown to have a noise of 12 e − and a signal to noise up to 150 in 55 Fe.
James Mylroie-Smith   +10 more
openaire   +1 more source

High Fill Factor Low-Voltage CMOS Image Sensor Based on Time-to-Threshold PWM VLSI Architecture

open access: yesIEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2014
This paper presents a CMOS image sensor (CIS) VLSI architecture based on a single-inverter time-tothreshold pulsewidth modulation circuitry capable of operating as low as 330-mV supply voltage while retaining a signal-to-noise ratio of 24 dB; an ...
Kyoungrok Cho   +2 more
exaly   +1 more source

A Compressive Sensing CMOS Image Sensor With Partition Sampling Technique

IEEE Transactions on Industrial Electronics, 2021
Hyunkeun Lee, Woo-Tae Kim, Jinho Kim
exaly  

Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature

Radiation Physics and Chemistry, 2020
MIGUEL Sofo Haro   +2 more
exaly  

CMOS Image Sensor With Per-Column ΣΔ ADC and Programmable Compressed Sensing

IEEE Journal of Solid-State Circuits, 2013
Abbas El Gamal
exaly  

Fully Depleted Pinned Photodiode CMOS Image Sensor With Reverse Substrate Bias

IEEE Electron Device Letters, 2017
Konstantin D Stefanov, Andrew Holland
exaly  

Effects of Aperture Diameter on Image Blur of CMOS Image Sensor With Pixel Apertures

IEEE Transactions on Instrumentation and Measurement, 2019
Byoung-Soo Choi   +2 more
exaly  

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