Results 291 to 300 of about 74,167 (345)

Latch-Up in CMOS Integrated Circuits

IEEE Transactions on Nuclear Science, 1973
The parasitic transistors and pnpn paths present on junction-isolated CMOS circuits have been identified and studied quantitatively. Active SCR structures exist which can be triggered electrically or by a radiation pulse. Detailed studies of SCR paths have been performed on two circuits, the CD4007A and the CD4041A, to relate geometrical and materials ...
B. L. Gregory, B. D. Shafer
exaly   +2 more sources

The Design of CMOS Radio-Frequency Integrated Circuits

Microelectronics International, 2004
exaly   +6 more sources

Paths to terahertz CMOS integrated circuits

2009 IEEE Custom Integrated Circuits Conference, 2009
A 140-GHz fundamental mode VCO in 90-nm CMOS and a 410-GHz push-push VCO in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS have been demonstrated. Based on these, paths to terahertz CMOS
Dongha Shim, Chuying Mao, Ruonan Han 0001, Swaminathan Sankaran, Eunyoung Seok, Changhua Cao, Wojciech Knap, Kenneth K. O   +7 more
openaire   +3 more sources

Reliability of CMOS Integrated Circuits

Computer, 1978
CMOS IC s are being produced using a variety of processes, and considerable data is now available on their reliability and failure mechanisms.
George L. Schnable, Larry J. Gallace, Henry L. Pujol   +2 more
openaire   +1 more source

CMOS integrated circuit reliability

Microelectronics Reliability, 1981
Abstract This paper summarizes recently published data on CMOS integrated circuit failure rates, and provides information on the effects of voltage, temperature, device complexity, and packaging on CMOS failure rates. Other factors which can affect failure rate are also indicated, including designs, materials, processes, in-process controls ...
George L. Schnable, Robert B. Comizzoli
openaire   +1 more source

Josephson-CMOS integrated circuits

Proceedings of 1994 IEEE International Electron Devices Meeting, 2002
We report the development of the first-ever monolithically integrated Josephson-CMOS circuits for digital memory, detector, and magnetometry applications at 4 K. The technology combines a 1.2 /spl mu/m dual-poly, n-well CMOS process, and a Nb/AlO/sub x/Nb trilayer process yielding Josephson junctions with critical current densities of 0.4-0.8 kA/cm/sup
U. Ghoshal, D. Hebert, T. Van Duzer
openaire   +1 more source

A monolithic CMOS IF integrated circuit for a superheterodyne transceiver

2017 IEEE 17th International Conference on Ubiquitous Wireless Broadband (ICUWB), 2017
A monolithic CMOS IF integrated circuit for a superheterodyne transceiver is designed in standard 0.18μm RF CMOS technology, which mainly includes an IF receiver, an IF transmitter and a local oscillation signal generator. The large-dynamic-range receiver is composed of an attenuating unit, a variable gain amplifier, a down-conversion mixer and a fixed-
Jingjian Zhang, Changchun Zhang, Peng Zhang, Ying Zhang, Yi Zhang 0022, Xincun Ji   +5 more
openaire   +1 more source

Three dimensional CMOS devices and integrated circuits

Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003., 2004
Three dimensional devices and, integrated circuits are attractive options for overcoming barriers in device and interconnect scaling, offering an opportunity to continue the CMOS performance trend. This paper reviews the process technology and associated design issues in three dimensional devices and integrated circuits.
Mei-Kei Ieong, Kathryn W. Guarini, Victor Chan, Kerry Bernstein, Rajiv V. Joshi, Jakub Kedzierski, Wilfred Haensch   +6 more
openaire   +1 more source

CMOS integrated circuit for sensing applications

19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006
In this work, a CMOS integrated circuit (IC) that can be employed to develop an integrated fiber optic sensor based on phase detection technique is presented. The CMOS IC combines the LED driver circuitry, optical detector and phase detector circuitry on a single chip.
openaire   +1 more source

Ge photodetectors integrated in CMOS photonic circuits

SPIE Proceedings, 2008
ABSTRACT We describe our approach to the monolithic integration of Ge photodetectors in a photonics-enabled CMOS technology.Ge waveguide photodetectors allow fast and efficient conversion of optical signals in the near infrared (1.55um) to theelectrical domain thus enabling the fabrication of compact, high speed (10Gbps) receivers.Keywords: Ge ...
G. MASINI, S. SAHNI, CAPELLINI, GIOVANNI, J. WITZENS, J. WHITE, D. SONG, AND C. GUNN   +6 more
openaire   +1 more source