Results 301 to 310 of about 74,167 (345)
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Hybrid integration of VCSEL's to CMOS integrated circuits
IEEE Journal of Selected Topics in Quantum Electronics, 1999Three hybrid integration techniques for bonding vertical-cavity surface-emitting lasers (VCSELs) to CMOS integrated circuit chips have been developed and compared in order to determine the optimum method of fabricating VCSEL based smart pixels for optical interconnects and free-space optical processing.
R. Pu, C. Duan, C.W. Wilmsen
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Noise immunity of CMOS integrated circuits
Microelectronics Journal, 1979Sources of noise in logic circuits are discussed and definitions stated. The good noise performance of CMOS devices is then explained.
T. Chesney, R. Funk
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Terahertz CMOS integrated circuits
2014 IEEE International Symposium on Radio-Frequency Integration Technology, 2014Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature.
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CMOS Photonic Integrated Circuits
Optical Fiber Communication Conference, 2012A platform for Systems-on-Chip with photonic input and output is presented. Electronic-photonic integrated circuits within existing state-of-the-art CMOS foundries are explored with applications ranging from multiprocessor interconnects to coherent communications.
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Radiation-hardened CMOS integrated circuits
Microelectronics Journal, 1980Over the past five years, substantial effort has been directed at radiation-hardening CMOS integrated circuits using various oxide processes. While most of these integrated circuits have been successful in demonstrating megarad hardness, further investigations have shown that the ‘wet-oxide process’ is most compatible with the RCA CD4000 Series process.
A. Pikor, E.M. Reiss
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Crosstalk analysis in CMOS integrated circuits
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2003The ICs in LSI technology require multilayer connecting-lead systems employing large leads density, diminishing the physical distance between individual leads. The small lead-to-lead separation results increased crosstalk effects inside the integrated circuits.
J. Novak, J. Foit
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Integrated Circuits Beyond CMOS
2008Semiconductor microelectronics, based on silicon CMOS circuits, is arguably the most successful technology ever developed by mankind because it sustained its fast, exponential (Moore’s Law) progress for several decades. As a result, this technology has become the basis of all current information technology revolution.
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Silicon gate CMOS integrated circuits
1970 International Electron Devices Meeting, 1970The major advantages offered by silicon-gate CMOS technology have been applied to the fabrication of monolithic integrated circuits for micropower applications. Complementary n- and p-channel enhancement-mode devices fabricated with silicon gate in conjunction with a unique substrate preparation tech, nique have exhibited threshold voltages of 0.5 ± 0 ...
R.R. Burgess, R.G. Daniels
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Latch-up in CMOS integrated circuits
1989This paper defines the latch-up failure mechanism in CMOS, analyzes methods and tools to detect it, including microscopy techniques capable of identify parasitic latch-up paths; test structures for the study of latch-up sensitivity and methods to prevent latch-up are also described.
FANTINI, Fausto +2 more
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Design of RF-CMOS Integrated Circuits for Wireless Communications
2007 IEEE International Workshop on Radio-Frequency Integration Technology, 2007The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part, high integration density, low power consumption, low cost under mass production aspects and excellent RF performance are the current ...
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