Results 61 to 70 of about 72,784 (298)

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Modeling and Calibration of Linear and Nonlinear Gain Factors in Different Stages of Pipelined Analog-to-Digital Converters Using a Modified Correlation Algorithm [PDF]

open access: yesمجله مدل سازی در مهندسی, 2019
Most of the integrated components used in current CMOS integrated circuits (IC) technology are inevitably nonlinear. This issue complicates the matching between such elements, and affects strongly the performance of analog circuits.
Hamed Aminzadeh
doaj   +1 more source

High-Performance Charge Pump Regulator with Integrated CMOS Voltage Sensing Control Circuit [PDF]

open access: gold, 2023
Chan‐Soo Lee   +5 more
openalex   +1 more source

Distortion Analysis of CMOS Based Analog Circuits [PDF]

open access: yes, 2016
The amplifiers are the vital part of the analog circuit designs. The linearity of the CMOS is of most important concern in the design of many analog circuits.
B, S. R. (Sathe)   +3 more
core  

A Low Noise Sub-Sampling PLL in Which Divider Noise Is Eliminated and PD-CP Noise Is not multiplied by N^2 [PDF]

open access: yes, 2009
This paper presents a 2.2-GHz low jitter sub-sampling based PLL. It uses a phase-detector/charge-pump (PD/CP)that sub-samples the VCO output with the reference clock. In contrast to what happens in a classical PLL, the PD/CP noise is not multiplied by N2
Bohsali, Mounhir   +3 more
core   +3 more sources

Electron–Matter Interactions During Electron Beam Nanopatterning

open access: yesAdvanced Functional Materials, EarlyView.
This article reviews the electron–matter interactions important to nanopatterning with electron beam lithography (EBL). Electron–matter interactions, including secondary electron generation routes, polymer radiolysis, and electron beam induced charging, are discussed.
Camila Faccini de Lima   +2 more
wiley   +1 more source

In Materia Shaping of Randomness with a Standard Complementary Metal‐Oxide‐Semiconductor Transistor for Task‐Adaptive Entropy Generation

open access: yesAdvanced Functional Materials, EarlyView.
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak   +14 more
wiley   +1 more source

The Challenges of Advanced CMOS Process from 2D to 3D

open access: yesApplied Sciences, 2017
The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades.
Henry H. Radamson   +8 more
doaj   +1 more source

Broadband, Flexible, Skin‐Compatible Carbon Dots/Graphene Photodetectors for Wearable Applications

open access: yesAdvanced Functional Materials, EarlyView.
Broadband, flexible photodetectors integrating nitrogen‐rich carbon dots with single‐layer graphene on plastic substrates are demonstrated. A biocompatible chitosan–glycerol electrolyte enables efficient low‐voltage gating and on‐skin operation. The devices exhibit ultraviolet‐to‐near‐infrared response, mechanical robustness under bending, and verified
Nouha Loudhaief   +20 more
wiley   +1 more source

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

open access: yesAdvanced Science
Diamond holds the highest figure‐of‐merits among all the known semiconductors for next‐generation electronic devices far beyond the performance of conventional semiconductor silicon.
Meiyong Liao   +2 more
doaj   +1 more source

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