Results 51 to 60 of about 74,167 (345)

High‐speed, two‐stage operational transconductance amplifier without Miller capacitor, suitable for large capacitive load

The Journal of Engineering
A two‐stage Class A‐AB operational transconductance amplifier with low power consumption, high slew rate, and high bandwidth is introduced for handling large capacitive loads. Unlike the conventional two‐stage operational transconductance amplifiers that
Mohammad Rashtian, Mahdi Shahpasandi, Javad Parastari   +2 more
doaj   +1 more source

A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

IEEE Journal of the Electron Devices Society, 2016
The reasons why state-of-the-art vertical bipolar circuits dissipate very high power are explained. The recent advent of SOI symmetric lateral bipolar transistors invites us to rethink bipolar as a high-speed but low-power technology.
Tak H. Ning
doaj   +1 more source

CMOS Platform for Everyday Applications Using Submillimeter Electromagnetic Waves

IEEE Open Journal of the Solid-State Circuits Society, 2023
Complementary Oxide Semiconductor (CMOS) integrated circuits (IC’s) technology is emerging as a means for realization of capable and affordable systems that operate at frequencies near 300 GHz and higher.
Kenneth K. O, Wooyeol Choi, Yukun Zhu, Haidong Guo   +3 more
doaj   +1 more source

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture [PDF]

, 2002
A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while ...
Aoki, Ichiro, Hajimiri, Ali, Kee, Scott D., Rutledge, David B.   +3 more
core   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Front-end Electronics for Silicon Trackers readout in Deep Sub-Micron CMOS Technology: The case of Silicon strips at the ILC [PDF]

, 2007
For the years to come, Silicon strips detectors will be read using the smallest available integrated technologies for room, transparency, and power considerations. CMOS, Bipolar- CMOS and Silicon-Germanium are presently offered in deepsubmicron (250 down
David, J, Dhellot, M, Fougeron, S, Genat, J F, Hermel, R, Lebbolo, H, Pham, T H, Savoy-Navarro, A, Sefri, R, Vilalte, s   +9 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Systematic Generation of Transconductance based Variable Gain Amplifier Topologies [PDF]

, 1998
A systematic method for the generation of variable gain amplifier topologies is proposed. The generation is based on voltage controlled current sources (VCCSs) modelling saturated MOS transistors, resistors or combinations of these elements.
Klumperink, Eric A.M., Tuijl, A.J.M. van
core   +2 more sources

Antennas embedded in CMOS integrated circuits

Facta universitatis - series: Electronics and Energetics, 2010
In this work we propose novel integrated antennas for chip-to-chip wireless interconnects. In order to save chip area, the available CMOS circuit ground planes can be used as radiating elements. The interference between the integrated antennas and the on-chip circuit interconnects should be minimised.
Hristomir Yordanov, Peter Russer
openaire   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source