Results 41 to 50 of about 2,964,989 (237)

Defect Tolerance in Hybrid nano/CMOS Architecture using Tagging Mechanism [PDF]

, 2009
In this paper we propose two efficient repair techniques for hybrid nano/CMOS architecture to provide high level of defect tolerance at a modest cost.We have applied the proposed techniques to a lookup table(LUT) based Boolean logic approach.
Srivastava, Saket, Melouki, Aissa, Al-Hashimi, Bashir   +2 more
core   +2 more sources

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

High‐speed, two‐stage operational transconductance amplifier without Miller capacitor, suitable for large capacitive load

The Journal of Engineering
A two‐stage Class A‐AB operational transconductance amplifier with low power consumption, high slew rate, and high bandwidth is introduced for handling large capacitive loads. Unlike the conventional two‐stage operational transconductance amplifiers that
Mohammad Rashtian, Mahdi Shahpasandi, Javad Parastari   +2 more
doaj   +1 more source

Photonic-Enabled Energy-Efficient Transparent Neuromorphic Computing Devices: A Review. [PDF]

Adv Sci (Weinh)
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Ghosh S, Lee KB, Lee J, Cho S, Patel M, Li H, Wen Y, Zhou Y, Kim J.   +8 more
europepmc   +2 more sources

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

A 3-electrode electrochemical cell on CMOS and application for amperometric measurement of dopamine

Frontiers in Nanotechnology
An overview of CMOS-integrated dopamine sensors - in which the working electrode(s) are monolithically integrated on the CMOS chip - is presented with a focus on key advantages of such monolithic integration, namely, the scalability and high spatial and ...
Minghao Li, Aishath N. Naeem, Sara S. Ghoreishizadeh   +2 more
doaj   +1 more source

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics, 2018
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj   +1 more source

A self‐biased and all‐in‐one voltage and current reference

Electronics Letters, 2021
This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET.
Yuanfei Wang, Ping Luo, Bingzhong Yang, Tianyuan Tang, Bo Zhang   +4 more
doaj   +1 more source