Results 31 to 40 of about 7,566 (261)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Key Technologies for THz Wireless Link by Silicon CMOS Integrated Circuits

Photonics, 2018
In terahertz-band communication using ultra-high frequencies, compound semiconductors with superior high-frequency performance have been used for research to date.
Minoru Fujishima
doaj   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

High‐speed, two‐stage operational transconductance amplifier without Miller capacitor, suitable for large capacitive load

The Journal of Engineering
A two‐stage Class A‐AB operational transconductance amplifier with low power consumption, high slew rate, and high bandwidth is introduced for handling large capacitive loads. Unlike the conventional two‐stage operational transconductance amplifiers that
Mohammad Rashtian, Mahdi Shahpasandi, Javad Parastari   +2 more
doaj   +1 more source

Review of Technologies for High-Voltage Integrated Circuits

Tsinghua Science and Technology, 2022
High-Voltage power Integrated Circuits (HVICs) are widely used to realize high-efficiency power conversions (e.g., AC/DC conversion), gate drivers for power devices and LED lighting, and so on. The Bipolar-CMOS-DMOS (BCD) process is proposed to fabricate
Bo Zhang, Wentong Zhang, Le Zhu, Jian Zu, Ming Qiao, Zhaoji Li   +5 more
doaj   +1 more source

Polarization‐Dependent Synaptic‐Like Electro‐Optical Response in Ferroelectric Nematic Liquid Crystals

Advanced Functional Materials, EarlyView.
Ferroelectric nematic liquid crystals (FNLCs) offer fast, tunable polarization and low‐voltage operation but suffer from poor polarization retention at zero field. Semiconductor‐modified FNLCs enhance polarization retention and exhibit short‐ and long‐term electro‐optical responses, while also supporting spike‐type signal integrations.
Kutay Sagdic, Weiming Yao, Danqing Liu
wiley   +1 more source

A Perspective on SOI Symmetric Lateral Bipolar Transistors for Ultra-Low-Power Systems

IEEE Journal of the Electron Devices Society, 2016
The reasons why state-of-the-art vertical bipolar circuits dissipate very high power are explained. The recent advent of SOI symmetric lateral bipolar transistors invites us to rethink bipolar as a high-speed but low-power technology.
Tak H. Ning
doaj   +1 more source

A self‐biased and all‐in‐one voltage and current reference

Electronics Letters, 2021
This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET.
Yuanfei Wang, Ping Luo, Bingzhong Yang, Tianyuan Tang, Bo Zhang   +4 more
doaj   +1 more source