Results 11 to 20 of about 17,755 (307)

CMOS-compatible photonic integrated circuits on thin-film ScAlN

APL Photonics
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its favorable nonlinear optical properties and compatibility with complementary metal–oxide semiconductor (CMOS) fabrication.
Sihao Wang, Veerendra Dhyani, Sakthi Sanjeev Mohanraj, Xiaodong Shi, Binni Varghese, Wing Wai Chung, Ding Huang, Zhi Shiuh Lim, Qibin Zeng, Huajun Liu, Xianshu Luo, Victor Leong, Nanxi Li, Di Zhu   +13 more
doaj   +2 more sources

A polarisation‐analysing CMOS image sensor for sensitive polarisation modulation detection

Electronics Letters, 2021
In this study, a polarisation‐analysing CMOS image sensor is fabricated for sensitive polarisation modulation detection. Although the image sensor with on‐pixel polarisers can image the incident polarisation collectively, its sensitivity to a weak ...
R. Okada, K. Sasagawa, M. Haruta, H. Takehara, H. Tashiro, J. Ohta   +5 more
doaj   +1 more source

Investigation of CDM ESD Protection Capability Among Power-Rail ESD Clamp Circuits in CMOS ICs With Decoupling Capacitors

IEEE Journal of the Electron Devices Society, 2023
The power-rail electrostatic discharge (ESD) clamp circuits have been widely used in CMOS integrated circuits (ICs) to provide effective discharging paths for on-chip ESD protection design. Among all ESD events, the most serious threat is posed to ICs by
Yi-Chun Huang, Ming-Dou Ker
doaj   +1 more source

Integrated Circuit Signal Generation and Detection Techniques for Microwave and Sub-Millimeter Wave Signals [PDF]

, 2012
The unabated reduction of device feature sizes in semiconductor processes, particularly in complementary metal-oxide semiconductor (CMOS) processes, has served as the enabling factor behind integrated electronic systems of ever increasing complexity and ...
Bohn, Florian
core   +1 more source

A simple CMOS chaotic integrated circuit

IEICE Electronics Express, 2008
A chaotic integrated circuit is designed and fabricated using a 0.35µm CMOS process. The circuit iterates an N-shaped transfer function using a small analog neural network. One of the advantages of the proposed circuit is its small circuit area with only 13MOS transistors.
José Luis Rosselló, Vincent Canals, Ivan de Paúl, Sebastià A. Bota, Antoni Morro   +4 more
openaire   +2 more sources

Design of a CMOS Integrated Circuit for an 8-to-3 Line Priority Encoder [PDF]

Científica
The aim of this work is the design of a priority encoder in an integrated circuit (IC) with CMOS technology, based on the Texas Instruments (TI) 74LS148 chip.
Rosaura Olvera Martínez, Juan Pablo Ocampo Flores, José Luis González Vidal, Heberto Gómez Pozos, Juan José Raygoza Panduro   +4 more
doaj   +1 more source

Reverse Engineering of CMOS Integrated Circuits

Elektronika ir Elektrotechnika, 2008
New methods for automated visual recognition of metal interconnect technological layers of integrated circuits are presented. Image processing and analysis algorithms are used in these methods to extract interconnect structure locations and dimensions.
Masalskis, Giedrius, Navickas, Romualdas
openaire   +2 more sources

Simple low power‐delay‐product parallel signed multiplier design using radix‐8 structure with efficient partial product reduction

The Journal of Engineering, 2023
The continued quest for finding a low‐power and high‐performance hardware algorithm for signed number multiplication led to designing a simple and novel radix‐8 signed number multiplier with 3‐bit grouping and partial product reduction performed using ...
Naga Venkata Vijaya Krishna Boppana, Saiyu Ren   +1 more
doaj   +1 more source

Noise figure and input intercept point's errors in an AGC‐less microwatt ultrawideband system (limiter and low noise amplifier)

IET Communications, 2021
The goal is to illustrate new errors about using the figures‐of‐merit NF and IIP, by investigating an AGC‐less microwatt ultrawideband gm‐boosted CMOS RF system with noise/distortion cancellation.
Shahab Shahrabadi
doaj   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Martinez, Martial, Gaillardin, M., Goiffon, Vincent, Gaillardin, Marc, Estribeau, Magali, Paillet, Philippe, Goiffon, V., Girard, Sylvain, Marcandella, Claude, Magnan, Pierre, Martinez, M., Magnan, P.   +11 more
core   +1 more source