Results 31 to 40 of about 3,011 (245)

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices

Advanced Electronic Materials
The unique characteristics of an anti‐ambipolar switch (AAS) device exhibit Λ‐shaped transfer responses (namely delta conductance) and present unique opportunities to overcome the limit of silicon‐based, complementary metal‐oxide‐semiconductor (CMOS ...
Jae Hyeon Jun, Yongsu Lee, Hae‐Won Lee, Minjae Kim, Hyeon Jun Hwang, Byoung Hun Lee   +5 more
doaj   +1 more source

Design and analysis of QCA adder circuits for efficient computation

ITEGAM-JETIA, 2021
QCA technology is considered a viable alternative for CMOS technology since it solves most of the CMOS implications. The Quantum dot Cellular Automata is a computer software program that relates a discrete dynamical system with quantum mechanics. Quantum
Jency Rubia J, Babitha Lincy R
doaj   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

Nature Communications, 2020
Designing efficient toxic-element-free technologies in solution-processable CMOS electronics remains a challenge. Here, the authors demonstrate integrated logic CMOS circuits based on heavy-metal-free colloidal CuInSe2 quantum dots with low switching ...
Hyeong Jin Yun, Jaehoon Lim, Jeongkyun Roh, Darren Chi Jin Neo, Matt Law, Victor I. Klimov   +5 more
doaj   +1 more source

Wide bandgap semiconductor-based integrated circuits

Chip, 2023
Wide-bandgap semiconductors exhibit much larger energy bandgaps than traditional semiconductors such as silicon, rendering them very promising to be applied in the fields of electronics and optoelectronics.
Saravanan Yuvaraja, Vishal Khandelwal, Xiao Tang, Xiaohang Li   +3 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

Advanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang, Tongji Zhu, PeiYu Cai, Xiaoming Ma, Zhen Wang, Ruifu Zhang, Yi Hao, Jingdi Lu, Liubing He, Jun Xu, Yuejie Zhang, Wanjun Jiang, Jing Tao, Shiming Lei, Pavel Parchinskiy, Jing Teng, Lingfei Wang, Wei Niu, Elton J.G. Santos, Xiaoqian Zhang, Peng Li   +20 more
wiley   +1 more source

A Novel Low Power and Reduced Transistor Count Magnetic Arithmetic Logic Unit Using Hybrid STT-MTJ/CMOS Circuit

IEEE Access, 2020
One of the major concern for CMOS technology is the increase in power dissipation as the technology node lowers down to deep submicron region. Magnetic tunnel junction (MTJ) working on Spin transfer torque (STT) switching mechanism is recognized as one ...
Prashanth Barla, Vinod Kumar Joshi, Somashekara Bhat   +2 more
doaj   +1 more source

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

An Expanded Benchmarking of Beyond-CMOS Devices Based on Boolean and Neuromorphic Representative Circuits

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2017
The latest results of benchmarking research are presented for a variety of beyond-CMOS charge- and spin-based devices. In addition to improving the device-level models, several new device proposals and a few majorly modified devices are investigated ...
Chenyun Pan, Azad Naeemi
doaj   +1 more source