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Linearity analysis of a CMOS image sensor
IS&T International Symposium on Electronic Imaging, 2017 Fei Wang, Albert Theuwissen
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2017 New Generation of CAS (NGCAS), 2017
In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
openaire +1 more source
In this paper, we present a novel event-driven Dynamic Tactile Sensor (DTS) for artificial devices. The sensor is based on the POSFET (Piezoelectric-Oxide-Semiconductor-Field-Effect-Transistor) as the tactile sensing device with the change detector (CD) circuit of the DVS (Dynamic Vision Sensor) [1] as a readout circuit.
Khalil A. A. +3 more
openaire +1 more source
Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
Igor Brouk, Yael Nemirovsky
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A CMOS Temperature Sensor Circuit
IEICE Transactions on Electronics, 2007A supply voltage (V DD ) independent temperature sensor circuit, which can be realized by the optimum combination of three current modes of n-MOSFETs including the subthreshold current using the feedback scheme from the temperature dependent voltage (V TD ) output to the gates of three n-MOSFETs, was proposed and fabricated by a standard 1.2μm n-well ...
Takashi Ohzone +5 more
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On the modelling of a CMOS magnetic sensor
1994 IEEE International Symposium on Circuits and Systems (ISCAS), 1994Magnetic sensors are useful in applications such as magnetic read heads and non-contact current sensors. Ideally, a magnetic sensor should be easily integrated with its peripheral circuits. Experimental results indicate that it is possible to convert a conventional MOS transistor into a magnetic sensor by splitting the drain of the device into two ...
Jack Lau, Ping K. Ko, Philip C. Chan
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