Results 51 to 60 of about 16,327 (261)
3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer
Sensors, 2017 This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature ...
Sho Asano +5 more
doaj +1 more source
Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor
IET Science, Measurement & Technology, 2021 This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and ...
Shashi Kumar +4 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon +4 more
wiley +1 more source
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Beilstein Journal of Nanotechnology, 2013 Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained ...
Denis E. Presnov +6 more
doaj +1 more source
A Novel Method to Increase LinLog CMOS Sensors’ Performance in High Dynamic Range Scenarios
Sensors, 2011 Images from high dynamic range (HDR) scenes must be obtained with minimum loss of information. For this purpose it is necessary to take full advantage of the quantification levels provided by the CCD/CMOS image sensor.
Andrés Iborra +3 more
doaj +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
Advanced Functional Materials, EarlyView.This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
Process and Reliability Sensors for Nanoscale CMOS [PDF]
IEEE Design & Test of Computers, 2012 This paper describes the use of sensing schemes that drive on-chip process and aging variation measurements in manufactured silicon.
John Keane 0001 +3 more
openaire +1 more source
Mechanical and Electrical Phenotype of hiPSC‐Cardiomyocytes on Fibronectin‐Based Hydrogels
Advanced Healthcare Materials, EarlyView.We introduce fibronectin‐based PEG hydrogels with controlled rigidity to enable the culture of iPSC‐derived cardiomyocytes. These substrates offer an alternative to the current culture of these cells on fibronectin‐coated glass, providing enhanced structural and functional behavior. The system provides a more physiologically relevant platform to assess
Ana Da Silva Costa +8 more
wiley +1 more source
CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers
MATEC Web of Conferences, 2016 A family of 2-D pixel CMOS ASICs have been developed to be used as readout electronics of gamma ray imaging instruments based on hybrid pixel sensor arrays.
Hatzistratis D. +4 more
doaj +1 more source
Monitoring the Whole Cycle Length Change of Cement Mortar Incorporated with SRA by CMOS Image Sensor
Sensors, 2020 This paper introduces a new method to measure whole cycle length change non-destructively and continuously using a digital image analysis system. The macroscale length changes of mortars containing different shrinkage-reducing admixture (SRA) dosages (0%,
Hao Wu +4 more
doaj +1 more source