Results 71 to 80 of about 92,891 (299)
Proceedings, 2018 This study implements the metal-oxide-semiconductor (MOS) type gas sensor using the TSMC 0.35 μm 2P4M process. The gas concentration is detected based on the resistance change measured by the proposed sensor.
Ya-Chu Lee +3 more
doaj +1 more source
Low power CMOS iImage sensor for face recognition [PDF]
, 2020 Imaging system is suitable for different purposes, depending upon their final application. Digital cameras, camcorders, webcams, security cameras or infrared (IR) cameras are well-known imaging systems.
Chan, Kit Heng, Ruslan, Siti Hawa
core
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
3-Axis Fully-Integrated Capacitive Tactile Sensor with Flip-Bonded CMOS on LTCC Interposer
Sensors, 2017 This paper reports a 3-axis fully integrated differential capacitive tactile sensor surface-mountable on a bus line. The sensor integrates a flip-bonded complementary metal-oxide semiconductor (CMOS) with capacitive sensing circuits on a low temperature ...
Sho Asano +5 more
doaj +1 more source
Design and simulation of a novel dual current mirror based CMOS‐MEMS integrated pressure sensor
IET Science, Measurement & Technology, 2021 This paper presents a novel dual current mirror based CMOS circuit for design and development of highly sensitive CMOS‐MEMS integrated pressure sensors. The proposed pressure sensing structure has been designed using piezoresistive effect in MOSFETs and ...
Shashi Kumar +4 more
doaj +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
Beilstein Journal of Nanotechnology, 2013 Background: An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.Results: A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained ...
Denis E. Presnov +6 more
doaj +1 more source
, 2005 Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel ...
Wermes, Norbert
core +1 more source
Process and Reliability Sensors for Nanoscale CMOS [PDF]
IEEE Design & Test of Computers, 2012 This paper describes the use of sensing schemes that drive on-chip process and aging variation measurements in manufactured silicon.
John Keane 0001 +3 more
openaire +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source