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A CNTFET Based Bit-Line Powered Stable SRAM Design for Low Power Applications
ECS Journal of Solid State Science and Technology, 2023Higher charge mobility, gate control, and better electrostatics are the key reasons that make a carbon nanotube field effect transistor (CNTFET) a better candidate as the successor of conventional complementary metal oxide semiconductor transistors ...
Ashish Sachdeva +3 more
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Dissipative transport in CNTFETs
Journal of Computational Electronics, 2007Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic scattering and the impact of parameters of inelastic scattering, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.
Mahdi Pourfath +2 more
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High Efficient GDI-CNTFET-Based Approximate Full Adder for Next Generation of Computer Architectures
IEEE Embedded Systems Letters, 2023Approximate computing (AC) is an emerging technique in arithmetic circuits. In this letter, a new AC-based full adder (FA) circuit is presented with 12 transistors, 150mm]Please confirm or add details for any funding or financial support for the research
A. Sadeghi +3 more
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2020
As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
openaire +1 more source
CNTFET-RFB: An Error Correction Implementation for Multi-valued CNTFET Logic
2016 IEEE 46th International Symposium on Multiple-Valued Logic (ISMVL), 2016This paper presents a solution for fault-tolerance in logic circuits comprised of Carbon Nanotube FETs (CNTFETs). This work builds on a recently proposed method for errorcorrection called Restorative Feedback (RFB). The RFB method is a variant of Triple-Modular Redundancy (TMR) that utilizes the fault masking capabilities of the Muller C element to ...
Gopalakrishnan Sundararajan +1 more
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A High-Speed Low-Energy One-Trit Ternary Multiplier Circuit Design in CNTFET Technology
ECS Journal of Solid State Science and Technology, 2023Contemporary system-on-chip-based applications are battery-powered. To increase the operation time, they need various low-power/energy circuits. Carbon nanotube field-effect transistor (CNTFET) is a potential alternative to complementary metal-oxide ...
Erfan Abbasian, Mahdieh Nayeri
semanticscholar +1 more source
IEEE Electron Device Letters, 2013
We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006., 2006
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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Effect of CNTFET Parameters on Novel High Stable and Low Power: 8T CNTFET SRAM Cell
Transactions on Electrical and Electronic Materials, 2021In this paper, we have investigated the stability and power consumption of an 8 transistor (8 T) carbon nanotube field-effect transistor (CNTFET) based static random-access memory (SRAM) cell. The power and noise performances of the proposed 8 T CNTFET SRAM cell are observed for write, hold and read operations. The power consumption and noise margin of
M. Elangovan, K. Gunavathi
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IEEE Transactions on Circuits and Systems - II - Express Briefs
Gate-all-around carbon nanotube field-effect-transistors (GAA-CNTFETs) and voltage-gated spin-orbit torque magnetic tunnel junctions (VGSOT-MTJs) are expected to realize significant savings in energy consumption and computing delay compared to the ...
Zhongzhen Tong +7 more
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Gate-all-around carbon nanotube field-effect-transistors (GAA-CNTFETs) and voltage-gated spin-orbit torque magnetic tunnel junctions (VGSOT-MTJs) are expected to realize significant savings in energy consumption and computing delay compared to the ...
Zhongzhen Tong +7 more
semanticscholar +1 more source