Results 161 to 170 of about 1,113 (217)
Nanotechnology-Based Modern Biosensors for the Detection of SARS-CoV-2 Virus. [PDF]
Indian J MicrobiolDevi S, Yadav N, Yadav R.
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Comparative Study and Analysis of CNTFET and Tunnel CNTFET
Journal of Nanoelectronics and Optoelectronics, 2018Shashi Bala +2 more
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Ternary SRAM circuit designs with CNTFETs
International Journal of Circuit Theory and Applications, 2023SummaryStatic random‐access memory (SRAM) is a cornerstone in modern microprocessors architecture, as it has high power consumption, large area, and high complexity. Also, the stability of the data in the SRAM against the noise and the performance under the radian exposure are main concern issues.
Abdelrahman, Doaa +4 more
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Effect of CNTFET Parameters on Novel High Stable and Low Power: 8T CNTFET SRAM Cell
Transactions on Electrical and Electronic Materials, 2021In this paper, we have investigated the stability and power consumption of an 8 transistor (8 T) carbon nanotube field-effect transistor (CNTFET) based static random-access memory (SRAM) cell. The power and noise performances of the proposed 8 T CNTFET SRAM cell are observed for write, hold and read operations. The power consumption and noise margin of
M Elangovan
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Journal of Computational Electronics, 2007
Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
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Based on the non-equilibrium Green’s function formalism we numerically studied gate-controlled tunneling carbon nanotube field-effect transistors. The effect of doping concentration on the performance of the device has been investigated. We show that an asymmetric doping profile can improve the Ion/Ioff ratio of the device improves.
Mahdi Pourfath +2 more
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2020
In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
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In recent years, carbon nanotube (CNT) emerged as one of the promising materials that shows various advantages over silicon material (e.g., aggressive channel length scaling due to absence of mobility degradation, variable bandgap with single material, ultra-thin body device that is possible due to smaller diameter [1-3nm], and compatibility of CNT ...
Amandeep Singh +2 more
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CNTFET-RFB: An Error Correction Implementation for Multi-valued CNTFET Logic
2016 IEEE 46th International Symposium on Multiple-Valued Logic (ISMVL), 2016This paper presents a solution for fault-tolerance in logic circuits comprised of Carbon Nanotube FETs (CNTFETs). This work builds on a recently proposed method for errorcorrection called Restorative Feedback (RFB). The RFB method is a variant of Triple-Modular Redundancy (TMR) that utilizes the fault masking capabilities of the Muller C element to ...
Gopalakrishnan Sundararajan +1 more
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IEEE Electron Device Letters, 2013
We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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We present a Nyquist stability criterion, together with step time responses, for the small-signal equivalent circuit model of common-source-configured carbon-nanotube (CNT) field-effect transistors (CNTFETs) made of 100 CNTs at 10-nm pitch as well as single CNTs, for the first time.
Saeed Haji-Nasiri +1 more
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Dissipative transport in CNTFETs
Journal of Computational Electronics, 2007Based on the non-equilibrium Green’s function formalism the performance of carbon nanotube field-effect transistors has been studied. The effects of elastic scattering and the impact of parameters of inelastic scattering, such as electron-phonon coupling strength and phonon energy, on the device performance are analyzed.
Mahdi Pourfath +2 more
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International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006., 2006
This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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This paper provides an overview of current types of CNTFETs and of some compact models. Using the available models, the influence of the parameters on the device characteristics was simulated and analyzed. The conclusion is that the tube diameter influences not only the current level, but also the threshold voltage of the CNTFET, while the contact ...
T. Dang, L. Anghel, R. Leveugle
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