Results 171 to 180 of about 1,113 (217)
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Design of explicit-pulse generators with CNTFET
2015 IEEE 11th International Conference on ASIC (ASICON), 2015A novel single-edge pulse generator (S-PG) and a dual-edge pulse generator (D-PG) are designed with Carbon Nanotube Field Effect Transistor (CNTFET). In order to generate pulse signal alternately, the output is controlled by delayed clock signal. The single-edge pulse generator without pseudo PMOS can reduce power consumption.
Wang Qian, Wang Pengjun, Gong Daohui
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Performance study of 12-CNTFET and GDI CNTFET based full adder in HSPICE
2014 International Conference on Advances in Engineering & Technology Research (ICAETR - 2014), 2014This manuscript reports and analyzes 12-CNTFET and GDI CNTFET based full adder implementation at 32 nm level. As figures of merit, stability, power dissipation and Power Delay Product (PDP) are considered for the best overall performance. Intensive HSPICE simulations have been performed to investigate the distribution of the power and delay of the ...
null Habib Muhammad Nazir Ahmad +4 more
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Modelling a CNTFET with Undeposited CNT Defects
2010 IEEE 25th International Symposium on Defect and Fault Tolerance in VLSI Systems, 2010The Carbon NanoTube Field Effect Transistor (CNTFET) is a promising device to supersede the MOSFET at the end of the technology roadmap of CMOS. When designing and manufacturing a CNTFET, additional features such as pitch, number and position of the CNTs must be considered to assess its performance.
Geunho Cho +2 more
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A Compact Noise Model for C-CNTFETs
ECS Journal of Solid State Science and Technology, 2017In this paper we present a compact noise model for C-CNTFETs implemented in Verilog-A. After a brief description of the main noise sources existing in CNTFETs, which constitute a significant limitation in the design of analogue and logic CNTFETs circuits, we enhance a model, already proposed by us, considering the noise sources.
Marani R, Gelao G, Perri AG
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Contact resistance extraction methods for CNTFETs
2015 45th European Solid State Device Research Conference (ESSDERC), 2015Three different methods for the extraction of the contact resistance based on both the well-known transfer length method (TLM) and two variants of the Y-function method have been applied to simulation and experimental data of CNTFETs and the results have been compared.
Anibal Pacheco-Sanchez +3 more
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Accurate SPICE compatible CNT interconnect and CNTFET models for circuit design and simulation
Mathematical and Computer Modelling, 2013 SPICE compatible CNT interconnect and CNTFET models in Verilog-A hardware description language are presented in this paper. Metallic CNTs are shown to have current saturation characteristics above a threshold voltage and then modelled with piecewise ...
Serhan Yamacli, Mutlu Avci
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Basics of CNTFET and Ternary Logic
2020In this chapter, we present key aspects of the CNTFET technology. As indicated earlier, carbon nanotubes have bandgaps that are dependent on the diameter of the tubes [1]. Also, the bandgap turns out to be a measure of the threshold voltage of the CNTFET.
K. Sridharan +2 more
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A Review on MOSFET-Like CNTFETs
Science & Technology Journal, 2016Carbon Nanotube Field Effect Transistor (CNTFET) is one of the promising devices for future nanoscale technologies. In this paper, we have studied the drain characteristics of MOSFET-like CNTFETs for different device parameters like, channel length, diameter of CNT, and number of tubes.
Vikash Prasad, Debaprasad Das
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2020
As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM.
Shashi Bala, Mamta Khosla, Raj Kumar
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Memristor-CNTFET based Ternary Full Adders
2020 IEEE 63rd International Midwest Symposium on Circuits and Systems (MWSCAS), 2020Recently multilevel systems are one of the hottest topics in the digital electronics field. Multi-level logic (MVL) overcomes the issues of interconnections. The ternary system is a promising system where the implementation complexity is low and more information can be stored compared to the binary logic system.
Amr Mohammaden +3 more
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