Results 151 to 160 of about 50,805 (272)

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

Advanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Effect of Gd Alloying on Magnetic Properties of Direct-Quenched Fe-Gd-B Nanocrystalline Alloys. [PDF]

Materials (Basel)
Wang L, Wang Y, Wang Z, Nie M, Huang F, Lv W, Fu H, Zhang H, Zhu Z.   +8 more
europepmc   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Structure and Magnetic Properties of Iron Thin Films Prepared at Different Deposition Times. [PDF]

Materials (Basel)
Zhou C, Yan L, Yan B, Han Z.
europepmc   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

Identifying grain boundary and intragranular pinning centres in Sm₂(Co,Fe,Cu,Zr)₁₇ permanent magnets to guide performance optimisation. [PDF]

Nat Commun
Giron S, Polin N, Adabifiroozjaei E, Yang Y, Maccari F, Kovács A, Almeida TP, Ohmer D, Üstüner K, Saxena A, Katter M, Radulov IA, Freysoldt C, Dunin-Borkowski RE, Farle M, Durst K, Zhang H, Alff L, Ollefs K, Xu BX, Gutfleisch O, Molina-Luna L, Gault B, Skokov KP.   +23 more
europepmc   +1 more source

Room‐Temperature Antiferroelectricity in Titanite (CaTiSiO5) Thin Films

Advanced Electronic Materials, EarlyView.
This study reports the first fabrication of titanite films featuring 1D chains of oxygen octahedra, along with the first observation of their antiferroelectric behavior at room temperature. A field‐induced ferroelectric phase is observed at ∼430 kV/cm, which is not reported in bulk titanite.
Weirong Yang, Taro Kuwano, Hiroki Taniguchi, Shintaro Yasui   +3 more
wiley   +1 more source

Emergent Spin Fluctuation and Structural Metastability in Self‐Intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ Compounds

Advanced Electronic Materials, EarlyView.
Metastable superstructure and emergent spin fluctuation in self‐intercalated Cr1+xTe2${\rm Cr}_{1+x}{\rm Te}_2$ ABSTRACT Intercalated van der Waals (vdW) magnetic materials host unique magnetic properties due to the interplay of competing interlayer and intralayer exchange couplings, which depend on the intercalant concentration within the van der ...
Clayton Conner, Ali Sarikhani, Theo Volz, Mathew Pollard, Mitchel Vaninger, Xiaoqing He, Steven Kelley, Jacob Cook, Avinash Sah, John Clark, Hunter Lucker, Cheng Zhang, Paul Miceli, Yew San Hor, Xiaoqian Zhang, Guang Bian   +15 more
wiley   +1 more source

Magneto-Ionic Physical Reservoir Computing in Perpendicularly Magnetized Heterostructures. [PDF]

Nano Lett
Rajib MM, Bhattacharya D, Jensen CJ, Chen G, Chowdhury FF, Sarker S, Liu K, Atulasimha J.   +7 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source