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Computer Graphics Forum, 2011
Abstract Development of approximation techniques for highly detailed surfaces is one of the challenges faced today. We introduce a new mesh structure that allows dense triangular meshes of arbitrary topology to be approximated. The structure is constructed from the information gathered during a simplification process.
Narcís Coll, Teresa Paradinas
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Abstract Development of approximation techniques for highly detailed surfaces is one of the challenges faced today. We introduce a new mesh structure that allows dense triangular meshes of arbitrary topology to be approximated. The structure is constructed from the information gathered during a simplification process.
Narcís Coll, Teresa Paradinas
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2008 IEEE Custom Integrated Circuits Conference, 2008
As CMOS technology continues its relentless scaling, new materials are being introduced and novel device structures are being considered. Adequate compact models and simulation techniques are required to account for their impact on circuit characteristics.
Gennady Gildenblat, Brian Chen
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As CMOS technology continues its relentless scaling, new materials are being introduced and novel device structures are being considered. Adequate compact models and simulation techniques are required to account for their impact on circuit characteristics.
Gennady Gildenblat, Brian Chen
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1988
A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the ...
Shiuh-Wuu Lee, Robert C. Rennick
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A description is given of ASIM (ATT i.e. the effects of mobility reduction, carrier velocity saturation, and channel length modulation are included in both. The ASIM model accounts for effects due to device dimensions and temperature. The performance of ASIM under DC and transient conditions is evaluated by comparing the current and voltage at the ...
Shiuh-Wuu Lee, Robert C. Rennick
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Compaction of Sediments and Different Compaction Models
2019Various simple and advanced models exist for mechanisms of uniform and non-uniform sediment compaction that increases density and reduces porosity. While the classical Athy’s relation on depth-wise exponential reduction of porosity is not divided into any distinct stages, the Hedberg’s model involves four stages.
Troyee Dasgupta, Soumyajit Mukherjee
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Compact Metallic Reflectance Models
Computer Graphics Forum, 1999The paper presents simple, physically plausible, but not physically based reflectance models for metals and other specular materials. So far there has been no metallic BRDF model that is easy to compute, suitable for fast importance sampling and is physically plausible.
László Neumann +2 more
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A compact and accurate model for classification
IEEE Transactions on Knowledge and Data Engineering, 2004We describe and evaluate an information-theoretic algorithm for data-driven induction of classification models based on a minimal subset of available features. The relationship between input (predictive) features and the target (classification) attribute is modeled by a tree-like structure termed an information network (IN).
Mark Last, Oded Maimon
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Compact modeling of noise in CMOS
IEEE Custom Integrated Circuits Conference 2006, 2006The physical background of the thermal noise equations of the PSP MOSFET model [1] is presented. The PSP thermal noise model is shown to pass a number of proposed benchmark tests for MOSFET thermal noise. Without any fitting parameters, it is shown to predict with great accuracy a collection of experimental data on three modern CMOS technologies.
Andries J. Scholten +3 more
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