Results 241 to 250 of about 25,106,713 (303)
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IEEE Transactions on Electron Devices
In this article, we have presented the use of prior physics knowledge-based artificial neural networks (KBANNs) to improve the simulation speed and accuracy of compact models for circuit simulations.
Kumar Sheelvardhan +4 more
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In this article, we have presented the use of prior physics knowledge-based artificial neural networks (KBANNs) to improve the simulation speed and accuracy of compact models for circuit simulations.
Kumar Sheelvardhan +4 more
semanticscholar +1 more source
IEEE Transactions on Electron Devices
Machine learning (ML)-assisted compact modeling framework is proposed for design-technology co-optimization (DTCO) of W-doped indium oxide (IWO) channel transistor.
Gihun Choe, Jungyoun Kwak, Shimeng Yu
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Machine learning (ML)-assisted compact modeling framework is proposed for design-technology co-optimization (DTCO) of W-doped indium oxide (IWO) channel transistor.
Gihun Choe, Jungyoun Kwak, Shimeng Yu
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Compact Metallic Reflectance Models
Computer Graphics Forum, 1999The paper presents simple, physically plausible, but not physically based reflectance models for metals and other specular materials. So far there has been no metallic BRDF model that is easy to compute, suitable for fast importance sampling and is physically plausible.
László Neumann +2 more
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IEEE Transactions on Electron Devices, 2019
As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM), the perpendicular magnetic anisotropy (PMA) magnetic tunnel junction (MTJ) has been extensively studied in recent years.
Guanda Wang +9 more
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As the basic storage unit of spin transfer torque magnetic random-access memory (STT-MRAM), the perpendicular magnetic anisotropy (PMA) magnetic tunnel junction (MTJ) has been extensively studied in recent years.
Guanda Wang +9 more
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Compaction of Sediments and Different Compaction Models
2019Various simple and advanced models exist for mechanisms of uniform and non-uniform sediment compaction that increases density and reduces porosity. While the classical Athy’s relation on depth-wise exponential reduction of porosity is not divided into any distinct stages, the Hedberg’s model involves four stages.
Troyee Dasgupta, Soumyajit Mukherjee
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Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices
IEEE Transactions on Electron Devices, 2019Physics-based compact models for redox-based resistive switching memory (ReRAM) devices are used to increase the physical understanding of the complex switching process as well as to allow for accurate circuit simulations.
Camilla La Torre +4 more
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On the modelling of the compaction mechanism of shock compacted powders
Journal of Materials Processing Technology, 2001Abstract A variety of ceramic or metallic components are produced for advanced structural applications by the powder consolidation technique. Dynamic consolidation is a method that involves a very rapid and intense deposition of shock energy at powder particle surfaces and has been already applied in the area of processing of high-Tc superconducting ...
A.G Mamalis, I.N Vottea, D.E Manolakos
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A physics-aware compact modeling framework for transistor aging in the entire bias space
International Electron Devices Meeting, 2019A unified compact modeling framework of device aging is proposed and verified on FinFET technology. For this purpose, the simplified EKV (sEKV) model is used for modeling the transfer characteristics and converting the stress current into carrier ...
Zhicheng Wu +10 more
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Micro-mechanical modelling of powder compaction
Journal of the Mechanics and Physics of Solids, 2001To model the compactification of a granular material by accounting for its microstructural properties, three different models (one isotropic, two anisotropic) are proposed and tested against each other (and, where available, against experimental data) in several scenarios.
Henderson, R. J. +4 more
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2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems, 2016
The cutoff frequencies and maximum frequencies of operation of short channel transistors have reached the terahertz (THz) range. In such devices, the ballistic electron transport, which was first proposed nearly 40 years ago, affects all the device characteristics - from the linear region (dominated by the so-called “ballistic mobility”) to a high ...
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The cutoff frequencies and maximum frequencies of operation of short channel transistors have reached the terahertz (THz) range. In such devices, the ballistic electron transport, which was first proposed nearly 40 years ago, affects all the device characteristics - from the linear region (dominated by the so-called “ballistic mobility”) to a high ...
openaire +1 more source

